Microcrystalline silicon thin film transistors obtained by hot-wire CVD

Abstract

Polysilicon Thin Film Transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in Flat Panel Displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by Hot Wire Chemical Vapor Deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.

Modeling of organic thin film field-effect transistors based on pentacene in saturation regime: Effect of light illumination

“…Polycrystalline hydrogenated silicon TFTs (poly-Si TFTs) are used in applications which require higher speed, such as RFIDs [1,2]. Nanocrystalline Silicon TFTs (nc-Si:H TFTs) partly combine the advantages of both types of transistors, since they consist of small silicon crystallites, embedded in amorphous silicon [2,3]. In recent years organic semiconductors have been extensively studied for various applications in ubiquitous low cost electronics such as solar cells, sensors [4][5][6], light-emitting diodes, and organic thin-film transistors (OTFTs) [7,8].…”

Investigations on doping of amorphous and nanocrystalline silicon films deposited by catalytic chemical vapour deposition

“…By using the SIMS measured P concentration in this film as the density of carriers, and a field-effect mobility value of 0.7 cm 2 V -1 s -1 , that we previously measured from thin film transistors [13], a dark conductivity of 11 S cm -1 could be expected. This value is nearly the same as the 9.7 S cm -1 measured value.…”

58.1: A 4.1‐Inch Flexible QVGA AMOLED Using a Microcrystalline‐Si:H TFT on a Polyimide Substrate

“…The main limitation to the AMOLED application is instability of a-Si:H TFTs, which results in the threshold voltage shift under prolonged operation [6]. Therefore the direct deposited microcrystalline silicon (µc-Si:H) by plasmaenhanced chemical vapor deposition (PECVD), as an active layer is the solution due to the high mobility and stability compared to its a-Si:H counterpart [4,[7][8][9]. In this paper, we report the fabrication and performance characteristics of bottom-gate TFTs employing an µc-Si:H active layer on colorless Polyimide (PI) substrate at 200 o C. The flexible AMOLED panel can play under bending.…”