Microelectronic Packaging Trends and the Role of Nanotechnology

Datta, Madhav

doi:10.1007/978-1-4419-1424-8_14

Cited by 5 publications

(6 citation statements)

References 48 publications

(57 reference statements)

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“…Another NPT dynamics simulation was then performed for the gradual release of residual stress in the system. The density of relaxed bulk CAS was 2.54 g/cm 3 , which is similar to the experimental density of 2.4 g/cm 3 within 10% error [29]. Then, the open boundary condition was applied in z direction to create the surface.…”

Section: Materials and Building Of Cas Substratesupporting

confidence: 61%

“…Initially, about 20,000 atoms are randomly located in a rectangular simulation box where periodic boundary conditions are applied for x, y, and z directions. The size of the box is 6.2 × 6.2 × 6.2 nm 3 . Then the box is heated from 300 K to 3600 K for 100 ps, melted at 3600 K for 200 ps, quenched with a cooling rate of 5 K/ps for 660 ps, and finally relaxed at room temperature for 200 ps [26][27][28].…”

Section: Materials and Building Of Cas Substratementioning

confidence: 99%

“…Cu metallization on non-conducting materials such as glasses or ceramic substrates has been one of the great interests in microelectromechanical systems (MEMS), packaging for semiconductors, and display industries [1][2][3][4]. The adhesion between Cu film and the oxide glasses (e.g., silicate) is too weak to satisfy the criteria for commercial use of the product [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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Effect of Sputter Deposition on the Adhesion and Failure Behavior between Cu Film and Glassy Calcium Aluminosilicate: A Molecular Dynamics Study

Park

Lee

2021

Metals

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Understanding the physical vapor deposition (PVD) process of metallic coatings on an inorganic substrate is essential for the packaging and semiconductor industry. In this work, we investigate a Copper (Cu) film deposition on a glassy Calcium Aluminosilicate (CAS) by PVD and its dependence on the incident energy. Molecular dynamics simulation is adopted to mimic the deposition process, and pure Cu film is grown on top of CAS surface forming intermixing region (IR) of Cu oxide. In the initial stage of deposition, incident Cu atoms are diffused into CAS bulk and aggregated at the surface which leads to the formation of IR. When the high incident energy, 2 eV, is applied, 20% more Cu atoms are observed at the interface compared to the low incident energy, 0.2 eV, due to enhanced lateral diffusion. As the Cu film grows, the amorphous thin Cu layer of 1 nm is temporarily formed on top of CAS, and crystallization with face-centered cubic from amorphous structure follows regardless of incident energy, and surface roughness is observed to be low for high incident energy cases. Deformation and failure behavior of Cu-CAS bilayer by pulling is investigated by steered molecular dynamics technique. The adhesive failure mode is observed, which implies the bilayer experiences a failure at the interface, and a 7% higher adhesion force is predicted for the high incident energy case. To find an origin of adhesion enhancement, the distribution of Cu atoms on the fractured CAS surface is analyzed, and it turns out that 6.3% more Cu atoms remain on the surface, which can be regarded as a source for the high adhesion force. Our findings hopefully give the insight to understand deposition and failure mechanisms between heterogeneous materials and are also helping to further improve Cu adhesion in sputter experiments.

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Section: Materials and Building Of Cas Substratesupporting

confidence: 61%

Section: Materials and Building Of Cas Substratementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of Sputter Deposition on the Adhesion and Failure Behavior between Cu Film and Glassy Calcium Aluminosilicate: A Molecular Dynamics Study

Park

Lee

2021

Metals

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“…These vacuum processes are not applicable for UBM etching since they redeposit the UBM material on the bump surface, thus preventing the solder from shaping into a ball during the reflow process. 8 Wet etching processes are predominantly used for UBM etching during electrochemical fabrication of flip-chip bumps. As indicated earlier, commonly employed UBM materials include Ti, TiW, Cr, Phased CrCu, Cu, Co and Ni.…”

Section: Under Bump Metallurgy Etchingmentioning

confidence: 99%

“…Figure 1 presents a schematic diagram showing a packaged microprocessor assembly. 8 The assembly consists of a chip, a package and a printed circuit board that are joined together to form a functional two-level package. In the first level of packaging, chips with solder bumps are flipped over and joined to the package substrate by reflow.…”

Section: Introductionmentioning

confidence: 99%

Manufacturing processes for fabrication of flip-chip micro-bumps used in microelectronic packaging: An overview

Datta

2019

Journal of Micromanufacturing

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Electronic packaging is the methodology for connecting and interfacing the chip technology with a system and the physical world. The objective of packaging is to ensure that the devices and interconnections are packaged efficiently and reliably. Chip–package interconnection technologies currently used in the semiconductor industry include wire bonding, tape automated bonding and flip-chip solder bump connection. Among these interconnection techniques, the flip-chip bumping technology is commonly used in advanced electronic packages since this interconnection is an area array configuration so that the entire surface of the chip can be covered with bumps for the highest possible input/output (I/O) counts. The present article reviews the manufacturing processes for the fabrication of flip-chip bumps for chip–package interconnection. Various solder bumping technologies used in high-volume production include evaporation, solder paste screening and electroplating. Evaporation process produces highly reliable bumps, but it is extremely expensive and is limited to lead or lead-rich solders. Solder paste screening is cost-effective, but issues related to excessive void formation limits the process to low-end products. On the other hand, electrochemical fabrication of flip-chip bumps is an extremely selective and efficient process, which is extendible to finer pitch, larger wafers and a variety of solder compositions, including lead-free alloys. Electrochemically fabricated copper pillar bumps offer fine pitch capabilities with excellent electromigration performance. Due to these virtues, the copper pillar bumping technology is emerging as a lead-free bumping technology option for high-performance electronic packaging.

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Effect of an Auxiliary Plate on Passive Heat Dissipation of Carbon Nanotube-Based Materials

Duan

Zhang

et al. 2018

Nano Lett.

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Carbon nanotubes (CNTs) and other related CNT-based materials with a high thermal conductivity can be used as promising heat dissipation materials. Meanwhile, the miniaturization and high functionality of portable electronics, such as laptops and mobile phones, are achieved at the cost of overheating the high power-density components. The heat removal for hot spots occurring in a relatively narrow space requires simple and effective cooling methods. Here, an auxiliary passive cooling approach by the aid of a flat plate (aluminum-magnesium alloy) is investigated to accommodate heat dissipation in a narrow space. The cooling efficiency can be raised to 43.5%. The cooling performance of several CNT-based samples is compared under such circumstances. Heat dissipation analyses show that, when there is a nearby plate for cooling assistance, the heat radiation is weakened and natural convection is largely improved. Thus, improving heat radiation by increasing emissivity without reducing natural convection can effectively enhance the cooling performance. Moreover, the decoration of an auxiliary cooling plate with sprayed CNTs can further improve the cooling performance of the entire setup.

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Microelectronic Packaging Trends and the Role of Nanotechnology

Cited by 5 publications

References 48 publications

Effect of Sputter Deposition on the Adhesion and Failure Behavior between Cu Film and Glassy Calcium Aluminosilicate: A Molecular Dynamics Study

Effect of Sputter Deposition on the Adhesion and Failure Behavior between Cu Film and Glassy Calcium Aluminosilicate: A Molecular Dynamics Study

Manufacturing processes for fabrication of flip-chip micro-bumps used in microelectronic packaging: An overview

Effect of an Auxiliary Plate on Passive Heat Dissipation of Carbon Nanotube-Based Materials

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