1996
DOI: 10.1109/23.506668
|View full text |Cite
|
Sign up to set email alerts
|

Microgap gas chamber studies

Abstract: Hydrogenated amorphous silicon carbide (a-Si:C:H) has been used as an insulating support pedestal for the anode strip in microgap gas chambers (MGCs) in an attempt to make a thicker high quality insulating layer. MGCs having 2.3 or 4.6 pm thick a-Si:C:H and 2.0 ym thick SiOz insulating layers have been built and tested. In this paper, the results of gas gains, strip damage by discharges, and preliminary aging studies are presented.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

1997
1997
2002
2002

Publication Types

Select...
4
1

Relationship

0
5

Authors

Journals

citations
Cited by 19 publications
references
References 13 publications
0
0
0
Order By: Relevance