Micromachined acoustic resonant mass sensor

Zhang, Hao; Kim, Eun Sok

doi:10.1109/jmems.2005.845405

Cited by 184 publications

(121 citation statements)

References 26 publications

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“…1 Some of the most ubiquitous among these are electrical oscillators, clocks, and microbalances based on piezoelectric crystals such as quartz. 2,3 Recent development of micromachining techniques has greatly facilitated the realization of various miniaturized piezoelectric devices, including zinc-oxide ͑ZnO͒ beam-structured, 4 disk, 5 and film bulk acoustic resonators ͑FBARs͒, 6 the noteworthy Agilent's commercialized AlN FBARs, 7 AlN contour-mode resonators and filters, 8 and monolithically integrated FBAR-complementary metal oxide semiconductor ͑CMOS͒ filters. 9 All these piezoelectric microelectromechanical systems ͑MEMS͒ have relied on active layers of approximately micron scale thickness that provide strong electromechanical coupling.…”

mentioning

confidence: 99%

“…Among its attributes are intrinsic integrability, high efficiency and electrical tunability, low power consumption, and low thermal budgets for materials processing permitting post-CMOS integration. [5][6][7][8][9] Previously we have prototyped piezoelectric NEMS using epitaxial gallium arsenide ͑GaAs͒ heterostructures. 14 To date, however, nanoscale resonators have not yet been realized with materials having higher piezoelectric coupling efficiency.…”

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confidence: 99%

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Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films

Karabalin

Matheny

Feng

et al. 2009

Applied Physics Letters

161

119

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We demonstrate piezoelectrically actuated, electrically tunable nanomechanical resonators based on multilayers containing a 100-nm-thin aluminum nitride ͑AlN͒ layer. Efficient piezoelectric actuation of very high frequency fundamental flexural modes up to ϳ80 MHz is demonstrated at room temperature. Thermomechanical fluctuations of AlN cantilevers measured by optical interferometry enable calibration of the transduction responsivity and displacement sensitivities of the resonators. Measurements and analyses show that the 100 nm AlN layer employed has an excellent piezoelectric coefficient, d 31 = 2.4 pm/ V. Doubly clamped AlN beams exhibit significant frequency tuning behavior with applied dc voltage.

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mentioning

confidence: 99%

mentioning

confidence: 99%

Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films

Karabalin

Matheny

Feng

et al. 2009

Applied Physics Letters

161

119

View full text Add to dashboard Cite

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“…Previous research has shown that a change in the mass of a MEMS resonator can be quantified by detecting a shift in the resonant 5 frequency [1]. The adsorption of gold atoms onto a nanoscale silicon carbide (SiC) clamped-clamped beam has been detected successfully through resonant frequency-shift [2].…”

Section: Introductionmentioning

confidence: 99%

Mass sensor utilising the mode-localisation effect in an electrostatically-coupled MEMS resonator pair fabricated using an SOI process

Wood

Zhao

et al. 2016

Microelectronic Engineering

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The change in the mass, achieved with focused ion beam (FIB) milling, of one of a pair of electrostatically-coupled microelectromechanical systems (MEMS) resonators has been detected utilising the mode-localisation effect. It has been demonstrated that the shift in the amplitude ratio of the coupled-resonators at the in-phase mode-frequency, in response to a mass change, is five orders of magnitude greater than the equivalent resonant frequency shift of a single resonator device. The device has been fabricated using a silicon-on-insulator (SOI) based process, which allows for high-yield and stiction-free fabrication. In addition, the design of the resonators has been created to have a larger surface area than previously reported designs, in order to facilitate future biological functionalisation. The mass sensitivity has been compared to current state-ofthe-art mode-localised mass sensors and a 5.4 times increase in the amplitude ratio response to a given mass change has been demonstrated for the device in this work.

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“…GHz) fields. 6,7 Recently, the thin film bulk acoustic resonator (FBAR) was proposed and the thickness of several micrometers of an FBAR allows it to operate at the resonant frequency around 1-10 GHz, which can achieve tens of times more mass sensitivity than a typical QCR. [8][9][10] The mass sensitivity characteristics of QCRs are significant for the sensor applications which have extensively attracted researchers' interests.…”

Section: Introductionmentioning

confidence: 99%

Vibration optimization of ZnO thin film bulk acoustic resonator with ring electrodes

2016

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A rectangular ZnO thin film bulk acoustic resonator with ring electrodes is presented in this paper to demonstrate the existence of a nearly uniform displacement distribution at the central part of this typical resonator. The variational formulation based on two-dimensional scalar differential equations provides a theoretical foundation for the Ritz method adopted in our analysis. The resonant frequencies and vibration distributions for the thickness-extensional modes of this ring electrode resonator are obtained. The structural parameters are optimized to achieve a more uniform displacement distribution and therefore a uniform mass sensitivity, which guarantee the high accuracy and repeatable measurement for sensor detection in an air or a liquid environment. These results provide a fundamental reference for the design and optimization of the high quality sensor.

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Micromachined acoustic resonant mass sensor

Cited by 184 publications

References 26 publications

Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films

Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films

Mass sensor utilising the mode-localisation effect in an electrostatically-coupled MEMS resonator pair fabricated using an SOI process

Vibration optimization of ZnO thin film bulk acoustic resonator with ring electrodes

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