Micromachining process simulation using a continuous cellular automata method

Zhu, Zhenjun; Liu, Chang

doi:10.1109/84.846706

Cited by 66 publications

(37 citation statements)

References 22 publications

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“…In this manner, during a simulation, the octree does not keep in memory the already etched regions nor the still unused bulk regions, which can represent a large fraction of the overall system volume when using masks (figure 3(a)). As an example, figure 3(e) shows the reduction in memory occupation obtained with an octree as compared to a dynamic 3D array which allocates and deallocates memory according to the size of the active band [29], which is a very frequent approach [24,25,43] and is illustrated by figure 3(a). Figure 3(e) shows that the octree uses about 75% less memory and that the memory used by the octree is equivalent to that used for simulating a flat surface (compare the black and red curves).…”

Section: The Octal Treementioning

confidence: 99%

“…The atoms have associated removal rates which depend on the site type (or cell type) that they occupy and the propagation of the surface is described as the overall result of gradually decreasing the occupation of the surface sites (or cells) according to the removal rates of the atoms (or occupants). The 'occupation' of the sites corresponds to the 'mass' of the atoms in the original presentation of the CCA method by Zhu and Liu [43]. For an explanation of the benefits of the use of the 'occupation', see [19].…”

Section: Continuous Cellular Automatonmentioning

confidence: 99%

“…The time compensation (TC) method was introduced in order to improve the accuracy of the CTS-CCA simulations [43]. Since the cell occupation eventually becomes smaller than the time step (problem (i) above), only a portion ( t * 1,2 in figure 6(b)) of the last time increment before the removal should be used, this way preventing a negative occupation value.…”

Section: Time Compensation (Tc)mentioning

confidence: 99%

See 2 more Smart Citations

Atomistic methods for the simulation of evolving surfaces

Gosálvez

Xing

Sato

et al. 2008

J. Micromech. Microeng.

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The currently available atomistic simulation tools for an evolving complex interface are described, focusing on the kinetic Monte Carlo (KMC) and cellular automata (CA) methods. The different versions of the two methods are considered, stressing their relative weaknesses and strengths. Data storage considerations lead to the choice of an octree data structure, of use in both KMC and CA simulations. The octree results in a substantial reduction in memory use, simultaneously benefiting from rapid addressability and fast searching properties. Examples in anisotropic etching are used to depict the use of the methods in practice and to describe the algorithms.

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Section: The Octal Treementioning

confidence: 99%

Section: Continuous Cellular Automatonmentioning

confidence: 99%

Section: Time Compensation (Tc)mentioning

confidence: 99%

See 1 more Smart Citation

Atomistic methods for the simulation of evolving surfaces

Gosálvez

Xing

Sato

et al. 2008

J. Micromech. Microeng.

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show abstract

“…Sanaei and Babaei (2011) carried out topology optimization of twodimensional elastic structures with shear and flexural strains by CA model. Zhu and Liu (2000) derived an anisotropic crystalline etching simulation program based on a novel continuous CA algorithm; more efficient and accurate topology optimizations were presented by the developed continuous model. A CA-based algorithm with five-step optimization procedure was proposed for simultaneous shape and topology optimization of continuum structures by Sanaei and Babaei (2012).…”

Section: Introductionmentioning

confidence: 99%

A Hybrid Cellular Automaton Method for Structural Topology Optimization With Mechanical and Heat Constraints

Deng¹,

Wang²,

Zhou³

et al. 2019

Frontiers in Heat and Mass Transfer

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A hybrid cellular automaton model combined with finite element method for structural topology optimization with mechanical and heat constraints is developed. The effect of thermal stress on structural optimization is taken into account. Higher order 8-node element and von Neumann strategy are employed for the finite element and the cellular element, respectively. The validating studies of standard testing structure for topological optimization are carried out. The structure evolution, stress evolution and thermal evolution of topology optimization with mechanical and heat constraints are investigated. The results show the developed hybrid method is more efficient for structural topology optimization. Meanwhile, the topology optimization can eliminate most of the thermal stress in the structure.

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“…[1][2][3][4] Various geometric models [5][6][7][8][9][10] and atomistic models [11][12][13][14][15][16][17][18][19][20][21][22] have been presented for silicon anisotropic etching simulations (SAES) to optimize the anisotropic etching processes and improve the efficiency of the MEMS design. [1][2][3][4] Various geometric models [5][6][7][8][9][10] and atomistic models [11][12][13][14][15][16][17][18][19][20][21][22] have been presented for silicon anisotropic etching simulations (SAES) to optimize the anisotropic etching processes and improve the efficiency of the MEMS design.…”

Section: Introductionmentioning

confidence: 99%

Step flow model in continuous cellular automata method for simulation of anisotropic etching of silicon

Rezvankhah

Shayan

Merati

et al. 2013

J. Micro/Nanolith. MEMS MOEMS

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A continuous cellular automaton (CCA) is presented for the simulation of anisotropic wet chemical etching in the fabrication of microstructures. Based on the step-flow model, the surface atoms are divided into categories according to the atom configurations on different crystal planes. An analytical solution for the dependence of the etch rate on orientation is derived, and the CCA approach makes a direct conversion of experimental macroscopic rates into calibrated microscopic parameters for realistic and reliable simulations. The presented model has been extended to a simulation system based on a CCA method. Linear search and variable time stepping are used to simulate a silicon wafer in various etching condition and mask shapes. The simulation results agree well with the experiments. This improved CCA makes possible for the realization of accurate simulations of anisotropic etching in engineering applications. Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 05/16/2015 Terms of Use: http://spiedl.org/terms J. Micro/Nanolith. MEMS MOEMS 023004-7 Apr-Jun 2013/Vol. 12(2) Rezvankhah et al.: Step flow model in continuous cellular automata method. . . Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 05/16/2015 Terms of Use: http://spiedl.org/terms

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Micromachining process simulation using a continuous cellular automata method

Cited by 66 publications

References 22 publications

Atomistic methods for the simulation of evolving surfaces

Atomistic methods for the simulation of evolving surfaces

A Hybrid Cellular Automaton Method for Structural Topology Optimization With Mechanical and Heat Constraints

Step flow model in continuous cellular automata method for simulation of anisotropic etching of silicon

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