Micromechanical measurement of beating patterns in the quantum oscillatory chemical potential of InGaAs quantum wells due to spin-orbit coupling

Abstract

The quantum oscillatory magnetization M(B) and chemical potential μ(B) of a two-dimensional (2D) electron system provide important and complementary information about its ground state energy at low temperature T. We developed a technique that provides both quantities in the same cool-down process via a decoupled static operation and resonant excitation of a micromechanical cantilever. On InGaAs/InP heterostructures, we observed beating patterns in both M(B) and μ(B) attributed to spin-orbit interaction. A significantly enhanced sensitivity in μ enabled us to extract Rashba and Dresselhaus parameters with high accuracy. The technique is powerful for detailed investigations on the electronic properties of 2D materials.

Experimental determination of Rashba and Dresselhaus parameters andg*-factor anisotropy via Shubnikov-de Haas oscillations

“…) on the order of 0.1 R a is consistent with the more recent analysis in [46], where the oscillatory B m( )was measured in weakly tilted fields.…”

Phase diagram of quantum Hall breakdown and nonlinear phenomena for InGaAs/InP quantum wells

“…Because of the mobility enhancement, In x Ga 1−x As QWs with Infraction x of ∼0. 75 have attracted attention over the years [25][26][27][28][29][30][31][32][33]. Other details of the growth and heterostructure are given in Refs.…”

“…As compared to lattice matched In 0.53 Ga 0.47 As/InP QWs, the 0.76 indium fraction is intended to reduce the effective mass and maximize the mobility at the cost of introducing strain [24]. Because of the mobility enhancement, In x Ga 1−x As QWs with Infraction x of ∼0.75 have attracted attention over the years [25][26][27][28][29][30][31][32][33]. Other details of the growth and heterostructure are given in Refs.…”