Optical Fiber Communication Conference 2014
DOI: 10.1364/ofc.2014.th4c.1
|View full text |Cite
|
Sign up to set email alerts
|

Micron-scale Silicon Photonic Devices and Circuits

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

0
9
0

Year Published

2015
2015
2018
2018

Publication Types

Select...
4
2

Relationship

1
5

Authors

Journals

citations
Cited by 10 publications
(9 citation statements)
references
References 1 publication
0
9
0
Order By: Relevance
“…Earlier reviews of lasers for Si integrated photonics based on interband transitions can be found in Refs. [9,14,15]. Significant progress has been made in the theoretical modeling and electroluminescence of intersubband SiGe quantum cascade structures, although optical gain and lasing remain a big challenge.…”
Section: Development and Challenges Of Active Devices In Si Photonicsmentioning
confidence: 99%
See 3 more Smart Citations
“…Earlier reviews of lasers for Si integrated photonics based on interband transitions can be found in Refs. [9,14,15]. Significant progress has been made in the theoretical modeling and electroluminescence of intersubband SiGe quantum cascade structures, although optical gain and lasing remain a big challenge.…”
Section: Development and Challenges Of Active Devices In Si Photonicsmentioning
confidence: 99%
“…[37] on Ge waveguides. Another interesting possible approach is to exploit the optimal carrier dynamics between Γ versus L valleys for onchip laser sources without active cooling [9] . Different from direct bandgap III-V semiconductors, the pseudo-direct gap configuration of band-engineered Ge can enhance the direct gap emission efficiency at high temperature and high injection levels due to enhanced L-to-Γ valley excitation or scattering, as evidenced from the increase in the integrated PL intensity with the increase in temperatures [17,60] and L-to-Γ intervally absorption [32] .…”
Section: ≪ 10mentioning
confidence: 99%
See 2 more Smart Citations
“…To be sure, the 100Gb/s transceiver chips have many new internal building blocks, including Franz-Keldysh modulators, echelle grating WDM devices and germanium photo diodes as shown in Figures 2(a) and 2(b) below. The details of these building blocks are described elsewhere [2][3][4][5][6]. The internal view in Figure 2(c) shows several important similarities to VOA packaging.…”
Section: A Highly Manufacturable 100 Gb/s Parallel Single Mode Transcmentioning
confidence: 99%