MicroRaman studies of implantation‐induced amorphization of Si and subsequent regrowth under high‐pressure and high‐temperature treatment

Abstract

Self-implanted silicon, exposed to thermal processing at high pressures, is studied by microRaman scattering. Implantationinduced amorphization as well as high-temperature and highpressure treatment-induced solid-phase epitaxial regrowth of the amorphized layer are observed. Based on Raman-based strain profiles, the existence of layers with tensile and compressive strain at the depths within the projected range of the implanted ions is revealed. A retarding effect of high pressure on the epitaxial recrystallization process is confirmed.