Microscopic Defects in Semi‐Insulating GaAs and Their Effect on the FET Device Performance

Yamamoto, Hiroyuki; Oda, Osamu; Seiwa, M.; Taniguchi, Misuzu; Nakata, Hisao; Ejima, M.

doi:10.1149/1.2096408

Cited by 21 publications

(2 citation statements)

References 11 publications

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“…These maybe achieved practically by g m compression. 41 The level of the conduction band with respect to the Fermi level is an important factor in determining whether normally-off operation is possible. Normally-off operation can be achieved when electron concentration [represented in Eq.…”

Section: Resultsmentioning

confidence: 99%

Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

et al. 2013

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The conditions for preparing normally-off GaN devices incorporating semi-insulating (SI) GaN materials are explored. The properties of SI GaN where carbon behaves as a deep level acceptor are predicted using a Shockley diagram. Metal-oxide-semiconductor (MOS) structures based upon these on SI-GaN layers are designed. The bandgap alignment of these structures is analyzed using Poisson equations. Normally-off operation is shown to be possible in devices featuring a thin n-GaN layer and SI-GaN layer, because of a higher conduction band energy. It is also shown that higher threshold voltage can be achieved by reducing the carrier concentration of the n-GaN channel layer

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Section: Resultsmentioning

confidence: 99%

Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

et al. 2013

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“…It has been demonstrated that subsurface defects could alter the performances of GaAs-based devices. [16] Additionally, because nanoscratching results in material displacement rather than material removal, it gives rise to hillock formations surrounding the features as well as debris within features. [14,17] The consequence is a much-increased surface roughness and a lack of control over the shape and edge-sharpness of the desired features.…”

Section: Introductionmentioning

confidence: 99%

A New Method of AFM‐Based Nanolithography Using Frequency Enhanced Electrochemical Pressure Solution Etching

Fraysse

MacLeod

Gates

et al. 2023

Adv Materials Technologies

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A new method of direct‐write nanolithography that is able to rapidly etch silica surfaces under a scanning atomic force microscopy (AFM) probe in tapping mode (TM) is reported. In this lithography technique, silica surfaces are etched using a recently described electro‐chemo‐mechanical phenomenon of frequency enhanced electrochemical pressure solution (FEEPS). In FEEPS, the tapping of the AFM tip generates oscillations of the Stern potential at the silica‐water interface that can accelerate the silica dissolution kinetics by more than 5–6 orders of magnitude when surface resonance states are achieved; i.e., when the oscillation frequency is in phase with the dynamics of interfacial chemical reaction steps. By scanning silica surfaces in TM, silica is selectively dissolved below the tapping tip as it is scanned. The FEEPS accelerated silica dissolution rates can generate etched features with depths of more than 60 nm in a single AFM tip pass. The rate of etching can be controlled easily by varying the scanning rate or by modulating the tapping frequency. This fine control over the silica etching process and because material is removed (dissolved) rather than displaced as with nanoscratching, the FEEPS process lends itself to gray‐scale nanolithography which is demonstrated.

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Advanced materials for GaAs Microwave Devices

Smith

Eddison

1992

Advanced Materials

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A number of 111-V compound semiconductors have higher electron mobilities and peak electron velocities than silicon. This makes these materials attractive for use in high-frequency applications. However, the use of these materials was delayed for a number of years by the fact that most of these compounds such as GaAs lack a stable native oxide and display a large interface trap density at the junction with other materials. These problems were overcome in the early 1960s by the development of the MESFET (metal semiconductor FET) where the control electrode was formed by a metal Schottky contact directly onto the GaAs surface. Early devices were fabricated in epitaxial conducting layers deposited, by for example vapor phase epitaxy, onto GaAs substrates. As the quality of these substrates improved, the conducting layers were formed by implantation of silicon ions directly into the substrate surface. The requirement for devices working a t even higher frequencies has necessitated the move from implanted MESFETs to more complicated multi-layer heterostructures, for devices such as HEMTs (high electron mobility transistors) and HBTs (heterojunction bipolar transistors), which can only be produced using epitaxial techniques. In this article the technique of ion-implantation and molecular beam epitax y are described together with a description of HEMTs and HBTs.

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Microscopic Defects in Semi‐Insulating GaAs and Their Effect on the FET Device Performance

Cited by 21 publications

References 11 publications

Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

A New Method of AFM‐Based Nanolithography Using Frequency Enhanced Electrochemical Pressure Solution Etching

Advanced materials for GaAs Microwave Devices

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