Microscopic homogeneity of emitters formed on textured silicon using in-line diffusion and phosphoric acid as the dopant source

Voyer, C.; Buettner, Tobias; Bock, Robert; Biro, Daniel; Preu, R.

doi:10.1016/j.solmat.2008.11.061

Cited by 17 publications

(17 citation statements)

References 3 publications

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“…Commonly 1,000 wafers are loaded in a single tube and with five diffusion tubes in a batch-type diffusion system, a throughput of up to 3,800 wafers/h can be achieved for solar cell manufacturing. Industrial Silicon Solar Cells DOI: http://dx.doi.org/10.5772/intechopen.84817 An inline diffusion system where the wafers are transported on a belt with phosphoric acid as the source of P dopants was also used in commercial production [32]. However, compared to the inline process, the batch process is more clean, effective and efficient.…”

Section: Emitter Diffusionmentioning

confidence: 99%

Industrial Silicon Solar Cells

Raval¹,

Reddy²

2020

Solar Cells

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The chapter will introduce industrial silicon solar cell manufacturing technologies with its current status. Commercial p-type and high efficiency n-type solar cell structures will be discussed and compared so that the reader can get a head-start in industrial solar cells. A brief overview of various process steps from texturing to screen-printed metallization is presented. Texturing processes for mono-crystalline and multi-crystalline silicon wafers have been reviewed with the latest processes. An overview of the thermal processes of diffusion and anti-reflective coating deposition has been presented. The well-established screen-printing process for solar cell metallization is introduced with the fast-firing step for sintering of the contacts. I-V testing of solar cells with various parameters for solar cell characterization is introduced. Latest developments in various processes and equipment manufacturing are also discussed along with the expected future trends.

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Section: Emitter Diffusionmentioning

confidence: 99%

Industrial Silicon Solar Cells

Raval¹,

Reddy²

2020

Solar Cells

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“…The experimental determination of the impact of texturing upon emitter recombination is complicated by the near impossibility of achieving identical profiles on textured surfaces [1], [13], [16], since the diffusion of dopants is either enhanced or retarded by the convex and concave features on a textured surface [17], [18].…”

Section: Experimental Results-diffused Surfacesmentioning

confidence: 99%

Isotextured Silicon Solar Cell Analysis and Modeling 2: Recombination and Device Modeling

Baker-Finch

McIntosh²,

Terry

et al. 2012

IEEE J. Photovoltaics

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We extend our analysis of isotextured silicon solar cells by 1) examining experimentally the role played by isotexture in determining the surface recombination velocity at silicon surfaces and 2) combining these experimental results with our model for photogeneration in order to simulate in one dimension typical solar cell devices with isotextured surfaces. We examine both undiffused and diffused n-type isotextured silicon surfaces, and we find that the rate of surface recombination usually decreases with increasing isotexture etch depth. However, when undiffused surfaces are passivated with hydrogenated SiO 2 or SiN x , surface recombination velocity is, counterintuitively perhaps, found to be independent of surface texture-this is despite a surface area that is up to 1.9-fold larger than a planar equivalent. We demonstrate the utility of our analysis of isotextured surfaces by simulating various device structures in one dimension. In one case, where device parameters are chosen to approximate a typical screen-printed cell with full-area back surface field, simulation results indicate that the optimal isotexture etch depth is 1-3 μm. This optimum etch depth is slightly below the one deduced from published experimental results, indicating that surface recombination on samples observed in this study is uniquely independent of isotexture morphology.

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“…SEM is often used to image structural defects associated with shunts like crystallographic defects [148], material defects [151], precipitates [148], and etch-pits [41,152,154]. For non-linear shunts caused by gaps in doping, SEM can be used to monitor PSG coverage uniformity [87] and SE contrasting can be used to confirm local doping inhomogeneities [85][86][87]. TEM has also been used for high resolution imaging of recombination active crystal defects as well as Si 3 N 4 inclusions and SiC precipitates [148].…”

Section: Shunts and Junction Pre-breakdown Metrologymentioning

confidence: 99%

“…Being able to image the p-n junction allows for the detection of discontinuities, which can be missed with one-dimensional profiling techniques. The EBIC method [81] and secondary electron (SE) contrast imaging [82][83][84][85][86][87], both performed in a SEM, are well suited for solar cell emitter characterization. The final product for the end-user is the module (as part of a PV installation), and not individual solar cells, therefore additional understanding is required to determine what role if any the emitter formation process plays in module reliability.…”

Section: Introductionmentioning

confidence: 99%

Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing

Davis

Rodgers

Scardera³

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the second article in a three-part series dedicated to reviewing each process step in crystalline silicon (c-Si) photovoltaic (PV) module manufacturing process: feedstock and wafering, cell fabrication, and module manufacturing. The goal of these papers is to identify relevant metrology techniques that can be utilized to improve the quality and durability of the final product. The focus of this article is on the cell fabrication process. In this review, the fabrication of c-Si PV cells is divided into four steps: (1) wet chemical processes; (2) emitter formation; (3) anti-reflection coating (ARC) and passivation deposition; and (4) metallization. Each of these processing steps can impact the final reliability and durability of PV modules deployed in the field, and here the failure modes and degradation mechanisms induced during cell manufacturing are explored. Additionally, a literature review of relevant measurement techniques aimed at reducing or eliminating the probability of such failures occurring is presented along with an assessment of potential gaps wherein the PV community could benefit from new research and demonstration efforts.

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Microscopic homogeneity of emitters formed on textured silicon using in-line diffusion and phosphoric acid as the dopant source

Cited by 17 publications

References 3 publications

Industrial Silicon Solar Cells

Industrial Silicon Solar Cells

Isotextured Silicon Solar Cell Analysis and Modeling 2: Recombination and Device Modeling

Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing

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