Microscopic interfacial structures and magnetic properties of ultrathin Co∕Si(111) films

Tsay, Jyh-Jong; Fu, Tsu Yi; Lin, Ming Chang; Yang, Cheng; Yao, Y. D.

doi:10.1063/1.2185259

Cited by 45 publications

(34 citation statements)

References 15 publications

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“…This behavior shows that the Co adatoms all contribute to the magnetization. No nonmagnetic layer at the interface was detected as compared to the metal/ semiconductor systems [24,25]. As the Co thickness increases above 8 nm, the slope of the Kerr intensity versus Co thickness plot decreases.…”

Section: Resultsmentioning

confidence: 90%

Structures and magnetic properties for electrodeposited Co ultrathin films on copper

Mangen

Bai

Tsay

2010

Journal of Magnetism and Magnetic Materials

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Section: Resultsmentioning

confidence: 90%

Structures and magnetic properties for electrodeposited Co ultrathin films on copper

Mangen

Bai

Tsay

2010

Journal of Magnetism and Magnetic Materials

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“…The background pressure of the UHV chamber was lower than 3×10 -10 Torr. The various components are described in detailed elsewhere [4,13]. The Ge(111) surface was cleaned by means of Ar + ion bombardment and subsequent annealing cycles until a well-ordered c(2×8) pattern was observed by LEED and no chemical impurity on the substrate surface was detected by AES.…”

Section: Methodsmentioning

confidence: 99%

“…In recent years magnetic films on semiconductor substrates have drawn much attention because of their interesting science and tremendous applications [1][2][3][4]. A great deal of literature focused on the influences of the physical properties of the films by the interfaces [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

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Magnetic properties of Co/Ge(111) films: effects of growth temperatures

Tsay¹,

Chen²,

Cheng³

et al. 2007

Physica Status Solidi (b)

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Effects of growth temperatures to the magnetic properties of Co/Ge(111) ultrathin films have been studied. For 22 monolayers Co/Ge(111) deposited at 200 and 300 K, the difference of the temperatures where ferromagnetism disappears upon annealing treatment is about 75 K. The Co/Ge interface shows a more ordered structure for films deposited at 200 K as revealed by low-energy electron diffraction measurements. The responses of magneto-optic signals could be explained by the different morphologies at the interfaces. A Co/Ge(111) system exhibits a strong in-plane anisotropy that is not altered by the interfacial conditions.

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“…The most inter esting experimental investigations of the structural and magnetic properties have been reported for Fe/Si [7⎯11] and Co/Si [10][11][12][13][14][15][16][17][18][19] thin film systems. Analysis of the available data showed that the antiferromagnetic exchange between iron layers in Fe/Si/Fe systems was observed for silicon layer thicknesses within 1.4-1.7 and 1.4-2.2 nm (see, e.g., [20,21]).…”

mentioning

confidence: 99%

Features of the magnetic properties of Co/Si/Co thin-film systems

et al. 2013

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The physical properties of thin magnetic films of 3d transition metals and multilayer structures consisting of alternating submicron thick magnetic and non magnetic layers are still among the most interesting objects for investigation in the physics of magnetic phenomena. The interest in these investigations is related, in particular, to the wide use of these systems in numerous devices of modern micro and nanoelec tronics based on the discovery of phenomena such as colossal magnetoresistance [1], antiferromagnetic exchange coupling between magnetic layers via non magnetic spacers [2], and oscillating exchange cou pling between ferromagnetic layers (Fe, Co) via non magnetic metal (Cu, Ag, Au, Mo, Ta, etc.) spacers [3,4]. Quantitative evaluation of the oscillating exchange coupling between magnetic layers in thin film systems as dependent on the thickness of a nonmagnetic metal interlayer is usually based on the Ruderman-KittelKasuya-Yosida mechanism (RKKY interaction) and takes into account the quantum confinement effects [5,6], which are manifested by changes in the electron structure of ultrathin magnetic layers (the appearance of so called quantum well states) as compared to that of volume materials.Despite considerable progress in investigation of the aforementioned materials, the physics of exchange interactions in thin film magnetic structures with semiconductor spacers is far from complete under standing of the observed phenomena. The most inter esting experimental investigations of the structural and magnetic properties have been reported for Fe/Si [7⎯11] and Co/Si [10][11][12][13][14][15][16][17][18][19] thin film systems. Analysis of the available data showed that the antiferromagnetic exchange between iron layers in Fe/Si/Fe systems was observed for silicon layer thicknesses within 1.4-1.7 and 1.4-2.2 nm (see, e.g., [20,21]). However, data on the exchange interaction between magnetic layers via nonmagnetic spacers in Co/Si/Co thin film systems are rather contradictory. At the same time, it is known that magnetic transition metals (Fe, Co) are widely used in multilayer structures possessing colossal mag netoresistance, while silicon is a base element for modern micro and nanoelectronics. Thus, the study of magnetic properties of systems consisting of mag netic metal layers with Si spacers is of special impor tance.This Letter presents the results of an investigation of the properties of Co/Si/Co thin film systems. In order to provide deeper insight into the behavior of Co/Si/Co trilayers in a magnetic field, we have thor oughly studied the influence of the thickness of silicon interlayer on these magnetic characteristics of sam ples.The experiments were performed with Co/Si/Co three layer structures grown by sequential magnetron sputter deposition of Co and Si layers onto glass sub strates at room temperature. The samples were pre pared in a vacuum chamber with a residual pressure of 3.8 × 10 -7 mbar. The working gas (argon) pressure dur ing sputtering was on the order of 3.8 × 10 -3 mbar. The thicknes...

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Microscopic interfacial structures and magnetic properties of ultrathin Co∕Si(111) films

Cited by 45 publications

References 15 publications

Structures and magnetic properties for electrodeposited Co ultrathin films on copper

Structures and magnetic properties for electrodeposited Co ultrathin films on copper

Magnetic properties of Co/Ge(111) films: effects of growth temperatures

Features of the magnetic properties of Co/Si/Co thin-film systems

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