Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001)

Ryong-Sok, O; Iwamoto, Atsushi; Nishi, Yuki; Funase, Yuya; Yuasa, Takahiro; Tomita, Takuro; Nagase, Masao; Hibino, Hiroki; Yamaguchi, Hiroshi

doi:10.7567/jjap.51.06fd06

Cited by 7 publications

(8 citation statements)

References 33 publications

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“…Raman microprobe mapping has proven to be a useful tool for identification of inhomogeneities within epitaxial graphene. 43,44 For instance Ryong-Sok and co-workers have been able to map bi-layered and multilayered-graphene domains on a 4H-SiC (0001) surface that is predominantly covered with monolayer graphene. 43 Several groups have been able to use the FWHM and peak positions of the 2D and G bands to evaluate crystal quality and to map compressive strain across the epitaxial graphene domains.…”

Section: Resultsmentioning

confidence: 99%

“…43,44 For instance Ryong-Sok and co-workers have been able to map bi-layered and multilayered-graphene domains on a 4H-SiC (0001) surface that is predominantly covered with monolayer graphene. 43 Several groups have been able to use the FWHM and peak positions of the 2D and G bands to evaluate crystal quality and to map compressive strain across the epitaxial graphene domains. Figure 8 depicts a topographical AFM map alongside co-localized Raman maps of the G (integrated between 1590 and 1630 cm À1 ) and D (between 1275 and 1450 cm À1 ) band spectral windows acquired for the same region.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Microwave-induced nucleation of conducting graphitic domains on silicon carbide surfaces

O'Loughlin

Depner

Schultz

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Microwave irradiation of the C-rich (0001¯) surface of 6H-SiC is seen to rapidly induce the nucleation of conductive nanoscopic graphitic grains. Discrete graphitic islands are observed and Raman spectroscopy suggests turbostratic stacking with minimal electronic coupling between adjacent graphene layers. Ensemble Raman and near-edge x-ray absorption fine structure (NEXAFS) spectroscopies are used in conjunction with spatially resolved atomic force microscopy, scanning Kelvin probe microscopy (SKPM), and colocalized Raman imaging to characterize the topography and electronic structure of the obtained graphitic domains and to develop a mechanistic description of the nucleation process. SKPM provides a direct spatially resolved means to differentiate conductive graphitic grains from the wide-bandgap SiC semiconductor. NEXAFS spectroscopy allows for evaluation of the planar alignment of the graphitic nuclei. The microwave processing method demonstrated here provides a facile route to patterning conductive domains on a ceramic component for applications in power electronics and multilayered ceramic capacitors.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Microwave-induced nucleation of conducting graphitic domains on silicon carbide surfaces

O'Loughlin

Depner

Schultz

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Figure 3 shows Raman spectra of a sample before and after UV light irradiation for 3 h. We measured the Raman spectra of the epitaxially grown graphene after UV light irradiation at the focal point where the intensity was maximum (about 50 mW/cm 2 ) and subtracted the SiC-related background in the spectra. [19][20][21][22] No significant change in D peak intensity (³1350 cm ¹1 ), which originates from defects in graphene sheets, [10][11][12][13][14][15][16][17][18]23,24) was observed. Thus, we confirmed that no defects were formed in the epitaxially grown graphene on SiC immersed in aqueous KOH (1 wt %) upon irradiation with strong UV light.…”

Section: Effect Of Uv Light On Epitaxially Grown Graphene On Sicmentioning

confidence: 98%

Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene

Ryong-Sok

Takamura

Furukawa

et al. 2015

Jpn. J. Appl. Phys.

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We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC (0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC (0001) was 2.5 μm/h under UV light irradiation in 1 wt% KOH at a constant current of 0.5 mA/cm 2 . The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.

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“…The sample was identified using an atomic force microscope (AFM) and a Raman spectroscope. 22) The sample was covered with singlelayer graphene and was homogeneous on the scale of the wafer. For the probes, we used the Ecopia SPCB-01; we used a Keithley 2430 as the measurement instrument and a pair of neodymium magnets to apply the magnetic field.…”

Section: Hall Voltagementioning

confidence: 99%

“…The annealing condition is 10 min at 1620 °C under a pressure of 100 Torr in an argon atmosphere. The sample was identified using an atomic force microscope (AFM) and a Raman spectroscope 22). The sample was covered with singlelayer graphene and was homogeneous on the scale of the wafer.…”

mentioning

confidence: 99%

Resistivity anisotropy measured using four probes in epitaxial graphene on silicon carbide

Kobayashi

Tanabe

Takuto

et al. 2015

Appl. Phys. Express

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The electronic transport of epitaxial graphene on silicon carbide is anisotropic because of the anisotropy of the surface structure of the substrate. This letter presents a new method for measuring anisotropic transport based on the van der Pauw method. This method can measure anisotropic transport on the macroscopic scale without special equipment or device fabrication. We observe an anisotropic resistivity that has a ratio of maximum to minimum values of 1.62. The calculated maximum mobility is 2876 cm 2 ·V -1 ·s -1 , which is 1.43 times higher than that obtained with the standard van der Pauw method.

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Microscopic Raman Mapping of Epitaxial Graphene on 4H-SiC(0001)

Cited by 7 publications

References 33 publications

Microwave-induced nucleation of conducting graphitic domains on silicon carbide surfaces

Microwave-induced nucleation of conducting graphitic domains on silicon carbide surfaces

Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene

Resistivity anisotropy measured using four probes in epitaxial graphene on silicon carbide

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