Microscopic Structure of Er-Related Optically Active Centers in Crystalline Silicon

Abstract

A successful observation and analysis of the Zeeman effect on the lambda approximately 1.54 microm photoluminescence band in Er-doped crystalline MBE-grown silicon are presented. The symmetry of the dominant optically active centers is conclusively established as orthorhombic I(C(2v)) with g axially approximately 18.39 and g radially approximately 0. In this way the long standing puzzle as regards the paramagnetism of optically active Er-related centers in silicon is settled. Preferential generation of a single type of an optically active Er-related center confirmed in this study is essential for photonic applications of Si:Er.

Optical gain of the1.54 μmemission in MBE-grown Si:Er nanolayers

“…2͑a͔͒. 11 In this study we concentrate on the nonlinear optical properties of the ultranarrow Er-1 center emission peak at ϳ1.54 m ͓Fig. 2͑b͔͒.…”

“…On the basis of detailed analysis of this spectrum, formation of a single type of optically active center ͑labeled Er-1͒ has been conclusively established. 11,12 When compared with broad spectra ͑ϳ30 meV͒, typical for Er 3+ ions in c-Si and large band-gap materials ͓e.g., semi-insulating polycrystalline silicon, 13 SiO 2 , 14 ZnO 2 , and GaN ͑Ref. 15͔͒, this ultranarrow Er-1 atomiclike PL spectrum could offer a significant increase for gain coefficient, of up to 3 orders of magnitude ͑Ϸ30 meV/ 8 eV͒.…”

Photonic Properties of Er-Doped Crystalline Silicon

“…2) Microstructure of Er-1 Center: Microscopic aspects of the Er-1 center were unraveled in a magnetooptical study [64]- [66]. This was possible due to the small width of the spectral lines.…”

“…In this case, eight spectral components will appear, with each PL line corresponding to a transition between effective spin doublets. , transitions were observed with the difference and also with the sum of the effective gfactors of the excited and ground states [64]- [66]. From the analysis of the angular dependence of the magnetic field induced splitting of PL lines, the orthorhombic-I symmetry ðC 2v Þ of the Er-1 center has been established, and individual g-tensors for several crystal field split levels within ground (J ¼ 15=2Þ and excited ðJ ¼ 13=2Þ state multiplets have been determined.…”

Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells

“…First, the binding energy of the carrier-impurity in the structure depends on the confinement potential ∆E, and second, both the binding energy and wave function of the carrier and impurity depends on the impurity position in the structure growth direction. On the other hand, due to recent progress in epitaxial crystal growth techniques, such as molecular beam epitaxy (MBE), research focusing on impurity and electronic states in nanostructures has attracted great attention [7,8]. However, effects caused by image charges due to the dielectric mismatch at the structure interface have been overlooked.…”