Microscopic theory of gain for an InGaN/AlGaN quantum well laser

Chow, Weng W.; Wright, Alan F.; Girndt, A.; Jahnke, F.; Koch, S. W.

doi:10.1063/1.120155

Cited by 55 publications

(26 citation statements)

References 14 publications

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“…Although many techniques of semiconductor gain measurements have been developed [1][2][3] the question concerning the physics of this process in nitride-based materials has been still brought up in numbers of publications [4][5][6]. Carrier dependent gain spectra have been theoretically determined taking into account internal piezoelectric fields, homogeneous broadening due to carrier-carrier and carrier-phonon scattering, bandfilling, Coulomb induced band gap renormalization and it's random fluctuation [7]. Our study on gain and saturation behaviour aims at finding the optimum working conditions for the high power III-nitride-system-based laser that we are especially interested in.…”

Section: Introductionmentioning

confidence: 99%

Optical gain and saturation behavior in homoepitaxially grown InGaN/GaN/AlGaN laser structures

Świetlik

Perlin

Suski

et al. 2007

Phys. Status Solidi (c)

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Optical gain and losses in semiconductor laser epilayers are of profound importance in device optimization. We used both parameters to estimate the potential of InGaN/GaN/AlGaN epitaxial system to be used as a laser structure emitting in a blue region. The sample was grown homoepitaxially by MOVPE technique on high quality bulk GaN substrates obtained in high pressure growth process. These structures are characterized by very low dislocation density (around 10 5 cm -2). As a result the reduction of a nonradiative recombination is expected which is reflected in reduced excitation pump power and gain saturation processes described by means of saturation length and a product of the latter and a maximum modal gain. To determine gain value and its saturation behavior a variable stripe length method is used employing one dimensional amplifier model. Maximum gain value of 190 cm -1 together with internal losses of 15 cmare determined for the studied structure. Low value of maximum saturation length of 320 um was found in our structures.

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Section: Introductionmentioning

confidence: 99%

Optical gain and saturation behavior in homoepitaxially grown InGaN/GaN/AlGaN laser structures

Świetlik

Perlin

Suski

et al. 2007

Phys. Status Solidi (c)

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“…Therefore, it is necessary to fabricate QWs with the optimum degree of the compositional fluctuation for a given LD structure. Chow et al theoretically predicted the effects of the compositional fluctuation on gain characteristics [9]. They took into account the gain broadening caused by the fluctuation.…”

Section: Temperature Dependence Of Pl Decay Timementioning

confidence: 99%

“…Chow et al have treated the fluctuation effect as a statistical average of independent QW systems and shown that the fluctuation deteriorates LD characteristics [9]. Uenoyama has shown theoretically that quantum dot (QD)-like structures may reduce the threshold current by utilizing the sharp gain peaks of the QD states [10].…”

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confidence: 99%

A Band-Tail Model for InGaN Alloy System and Design for Quantum Well Laser Operation

Yamaguchi

Kuramoto

Nido

et al. 2001

phys. stat. sol. (a)

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We have constructed a new theoretical model of compositional fluctuation in InGaN quantum wells (QWs) to investigate the effects of the fluctuation on emission properties and laser performance. The temperature dependence of the photoluminescence decay time for InGaN-QW structures is fully analysed by the model in terms of a band-edge state modified by the compositional variation. This model is then used to predict performance for InGaN-QW lasers. We found that the differential gain and the critical carrier density of the inversion distribution are strongly correlated with the fluctuation but in opposite ways and that the utilisation of the fluctuation is beneficial for a specific laser operation condition. Furthermore, laser diodes with different degrees of fluctuation in the active layers have been fabricated and the predicted dependence of differential gain on the fluctuation has been verified experimentally.

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“…As an example of some of the results from our calculations, Figure 2 shows the computed gain/absorption spectra for a 4 nm Ino.lG~.gN/ AI0.zG~.8N quantum well structure at T=300K and carrier densities of N = 0.1, 0.5, 1.0, 2.0, 4.0 and 6.0x1012 cm-2 (solid line is highest) [2]. An iridium concentration variation of o = 0.01 was assumed.…”

Section: Photon Energy (Ev)mentioning

confidence: 99%