Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells

Abstract

Optical gain and photoluminescence as well as radiative and Auger losses are calculated for Ga(AsBi)/GaAs quantum wells. The results are obtained using a consistent microscopic theory and an anticrossing model for the band structure. The influence of the band structure parameters on the optical properties is investigated.

Theoretical study of optoelectronic properties of GaAs 1 − x Bi x alloys using valence band anticrossing model

“…Quantitatively, most physical parameters derived from the two models are not equal. Our results obtained from the (14 Â 14) V-BAC model agree well with theoretical and experimental works reported in the literature [11,19,20,23]. We can conclude that (14 Â 14) BAC model is more suitable than (12 Â 12) BAC model to analyze the physical properties of this alloy.…”

“…The band edges offsets DE CBM , DE VBM and DE so used in our computation are À2.1, 0.8 and À1.1 eV respectively [19]. The resulting (14 Â 14) matrix Hamiltonian is given by [20]:…”

“…Recent works have measured the Bi composition (x) and the temperature (T) dependence of the electron [12,13] and hole mobility [14][15][16]. The reported transport properties in GaAsBi are directly related to carrier effective mass which have been calculated in this work as functions of x and T. Theoretically, the electronic band structure (BS) of GaAsBi dilute alloys was calculated using the tight-binding method [17], the density functional theory based on the full potential linearized augmented plane wave method [18] and the valence band anticrossing (V-BAC) model [19,20]. This work presents also a comparative study based on the (12 Â 12) and (14 Â 14) V-BAC models applied to compute BS of GaAsBi along D-, K-and R-directions.…”

Theory of the Electronic and Optical Properties of Dilute Bismide Quantum Well Lasers

“…This has stimulated significant interest in the use of dilute bismide alloys for a range of applications [1], including semiconductor lasers [2], [3], [4], [5] and photodiodes [6], [7], [8], as well as photovoltaics [9], spintronics [10], [11] and thermoelectrics [12].…”

Theoretical calculations of absorption spectra of GaNAsBi-based MQWs operating at 1.55 μm

“…The progress in the epitaxial growth technology have opened the way to grow and study the Bi and N containing IIIeV QWs structures such as GaAsBi [3,17], GaNAs [18,19] and GaInNAs simple quantum wells (SQWs) [20,21]. It has been shown that the emission 1.32 mm can be reached by GaInNAs/GaAs SQWs lasers with high temperature performance grown by MBE [20].…”