Microstrip Varactor-Tuned Millimeter-Wave IMPATT Diode Oscillators

Denlinger, E.J.; Rosen, Jerome; Mykietyn, E.; McDermott, E.C.

doi:10.1109/tmtt.1975.1128727

Cited by 14 publications

(1 citation statement)

References 7 publications

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“…Cp is also largely dependent on packaging. The condition for causing oscillation [7] is |ReYD| >ReYLt (3) The |ReY,| is generally about 1/8 simen, so that YL has to be fairly large for the |Re YL to be small enough for oscillation to occur, Also for oscillation ReYD =lReYL (4) Im YD Im YL (5) If we determine the operating frequency experimentally and with known values of YL', LP and Cp, using (5), the value ofBD can be verified by (6) BD = YL +C)2C2 2 (LSY2 CP + 2CCeYLS) Where YL = YL'In2 Ce = XA + CP + 1/(CW2Xbl) (6) (7) (8) If the load across terminals AB is complex, the characteristics are changed in two ways. Firstly, the frequency is pulled away from the nonreactive loaded condition to a new frequency where equation (5) applies.…”

Section: Introductionmentioning

confidence: 99%

Half Mode Substrate Integrated Waveguide Gunn Oscillator

Zhong

et al. 2008

2008 Global Symposium on Millimeter Waves

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Based on the Half Mode Substrate Integrated Waveguide (HMSIW) technology, a new type of Gunn DiodeOscillator was developed. Main emphasis was placed on HMSIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode transistor devices have been analyzed. This oscillator's performance is characterized by medium level output power of 13.2dBm, phase noise less than -97.3 dBc/Hz*100 kHz and frequency excursion 40MHz over temperature range from 10°C to 75 "C. It has some advantages such as planar integration, low cost, small size, good temperature-frequency stability, low phase noise.Index Terms-half mode substrate integrated waveguide, resonant cavity, GUNN diode, oscillator.

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