No abstract

This article presents a novel bandpass-response power divider with high frequency selectivity. The centrally stub-loaded resonators are applied to this power divider in order to provide bandpass-filtering frequency response. In addition, the presented power divider has three transmission zeros, which can be used to improve the frequency selectivity. The measured results demonstrate the good performance of the fabricated bandpass-response power divider with high selectivity. V C 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1560-1562, 2013; View this article online at wileyonlinelibrary.com.

Based on the Half Mode Substrate Integrated Waveguide (HMSIW) technology, a new type of Gunn DiodeOscillator was developed. Main emphasis was placed on HMSIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode transistor devices have been analyzed. This oscillator's performance is characterized by medium level output power of 13.2dBm, phase noise less than -97.3 dBc/Hz*100 kHz and frequency excursion 40MHz over temperature range from 10°C to 75 "C. It has some advantages such as planar integration, low cost, small size, good temperature-frequency stability, low phase noise.Index Terms-half mode substrate integrated waveguide, resonant cavity, GUNN diode, oscillator.

No abstract

No abstract