Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering

Chandra, G. Hema; Cruz, J. Pérez de la

doi:10.1016/j.jcrysgro.2012.05.034

Cited by 5 publications

(3 citation statements)

References 34 publications

(53 reference statements)

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“…The similar results are presented in reference [4,5]. In order to increase the stoichiometry ratio (~50%atoms of P and ~50%atoms of In) we use two methods:…”

Section: Resultsmentioning

confidence: 60%

Porous and RF sputtering InP for portable THz-TDS in pharmaceutical and medical applications

Sirbu¹,

Ghimpu²,

Dănilă

et al. 2013

CAS 2013 (International Semiconductor Conference)

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“…The similar results are presented in reference [4,5]. In order to increase the stoichiometry ratio (~50%atoms of P and ~50%atoms of In) we use two methods:…”

Section: Resultsmentioning

confidence: 60%

Porous and RF sputtering InP for portable THz-TDS in pharmaceutical and medical applications

Sirbu¹,

Ghimpu²,

Dănilă

et al. 2013

CAS 2013 (International Semiconductor Conference)

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“…Similarly, the sharpness observed in the interference fringes of stacked layers selenized at 300, 350 and 400 °C indicates a decrease of surface roughness with improvement in the film crystallinity [39]. A low transmittance (less than 10%) was observed for stacked layers selenized at a temperature of 450 °C due to the poor crystallinity [40]. The appearance of maxima and minima in reflectance spectra indicates the specular nature of selenized thin films, thus revealing negligible possibility of scattering [41].…”

Section: Surface Morphologymentioning

confidence: 99%

Low temperature crystallization of Cu2ZnSnSe4 thin films using binary selenide precursors

Patil

Nagapure

Mary

et al. 2017

J Mater Sci: Mater Electron

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composition of elements across the thickness is fairly uniform. Energy dispersive X-ray analysis measurement reveals that the obtained films are Cu-poor and Zn-rich. The scanning electron micrographs of binary selenide stacks selenized at a temperature of 350 °C shows randomly oriented cylindrical grains. The optical absorption studies indicated a direct band gap of 1.01 eV. The films showed p-type conductivity with electrical resistivity of 4.66 Ω cm, Hall mobility of 15.17 cm 2 (Vs) −1 and carrier concentration of 8.82 × 10 16 cm −3 .

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“…Presently, the highest quality devices are all generated via wafer bonding and epitaxial transfer approaches. − Direct growth approaches often suffer from low material quality due to the formation of nanocrystalline materials or defects if grown on highly mismatched substrates. Most monolithic material integration schemes for back-end compatible materials result in polycrystalline films with maximum reported mobilities on the order of 100 cm 2 /(V s). − Templated liquid phase (TLP) growth has been shown to be a promising route toward growth of crystalline semiconductors on nonepitaxial substrates, − overcoming the limitations of standard vapor phase growth techniques with typical mobilities 2–5 times higher than other monolithic integration schemes.…”

Section: Introductionmentioning

confidence: 99%

Monolithic High-Mobility InAs on Oxide Grown at Low Temperature

Sarkar

Teishima

Ahsan

et al. 2020

ACS Appl. Electron. Mater.

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We demonstrate high electron mobility single-crystal InAs mesas monolithically integrated on amorphous dielectric substrates at a growth temperature of 300 °C. Critically, a room temperature mobility of ∼5800 cm 2 /(V s) was measured, the highest mobility reported for any thin-film semiconductor material system directly grown on a nonepitaxial substrate. Detailed modeling of the scattering mechanisms in the grown material indicates that the mobility is limited by surface roughness scattering, not the intrinsic material quality. We project that reducing the RMS surface roughness of the InAs from 1.8 to 1 nm would produce materials with room temperature mobilities of >10000 cm 2 /(V s), and RMS roughness of 0.5 nm would result in mobility of ∼20000 cm 2 /(V s), essentially identical with epitaxially grown materials. These results pave the way for growth of high-mobility materials directly onto the back end of silicon CMOS wafers and other nonepitaxial substrates such as glass, as well as polymers for flexible electronics.

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Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering

Cited by 5 publications

References 34 publications

Porous and RF sputtering InP for portable THz-TDS in pharmaceutical and medical applications

Porous and RF sputtering InP for portable THz-TDS in pharmaceutical and medical applications

Low temperature crystallization of Cu2ZnSnSe4 thin films using binary selenide precursors

Monolithic High-Mobility InAs on Oxide Grown at Low Temperature

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