Microstructural and surface property variations due to the amorphous region formed by thermal annealing in Al-doped ZnO thin films grown on n-Si (100) substrates

Han, Jun Hee; No, Young Soo; Kim, T. W.; Lee, Jun Young; Kim, J. Y.; Choi, Won‐Kook

doi:10.1016/j.apsusc.2009.10.038

Cited by 11 publications

(1 citation statement)

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“…Extensive research work has been devoted recently to the preparation and characterization of ZnO: Al doped thin films, due to their large area of applications, such as transparent conductors, electronic devices, UV detectors, solar cells [1][2][3][4]. A significant improvement of the films conductivity has been achieved by doping with group III elements: B, Al, Ga, In.…”

Section: Introductionmentioning

confidence: 99%

Micro-nanostructural and composition characterization of ZnO: Al doped films by SEM-EDX and HRTEM-EDX

Vasile

Plugaru

Mihaiu

et al. 2011

CAS 2011 Proceedings (2011 International Semiconductor Conference)

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We present the results of a structural and compositional investigation of Al-doped thin films obtained by sol-gel deposition on Si/SiO 2 substrates. Taking into consideration the layer by layer deposition process and that the films contain 1-10 successive layers, the evolution of structure and elemental composition, especially Al concentration in the films were investigated by energy dispersive X-ray analyses in the scanning and high resolution transmission electron microscopy. Qualitative composition of the structures observed in the films have been evidenced in the elemental maps.

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Section: Introductionmentioning

confidence: 99%