Influence of TiO2 buffer layer and post-annealing on the quality of Ti-doped ZnO thin films

Lin, Yueh Chin; Hsu, Chun-Yao; Hung, Shih‐Chang; Wen, Dong

doi:10.1016/j.ceramint.2012.12.099

Cited by 23 publications

(5 citation statements)

References 32 publications

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“…Physical properties of pure ZnO films can be significantly enhanced by doping of some active transition metals. In the past, a wide variety of transition metals have been used as dopants in ZnO, such as Mo [5], Ni [6], Co [7], Ti [8], Cu [9] and V [10] using several deposition techniques at desired doping concentrations. Although various deposition methods were carried out to produce doped ZnO, the dopant concentration effect on ZnO host lattice is still not clear and challenging.…”

Section: Introductionmentioning

confidence: 99%

Enhanced photoluminescence properties of Cu-doped ZnO thin films deposited by simultaneous RF and DC magnetron sputtering

Sreedhar

Kwon

et al. 2016

Materials Science in Semiconductor Processing

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Section: Introductionmentioning

confidence: 99%

Enhanced photoluminescence properties of Cu-doped ZnO thin films deposited by simultaneous RF and DC magnetron sputtering

Sreedhar

Kwon

et al. 2016

Materials Science in Semiconductor Processing

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“…However, titanium (Ti) was found to be a promising candidate for ZnO doping because its ionic size (Ti +4 ) is smaller than that of Zn +2 [11] , which facilitates its incorporation within ZnO crystal lattice [7] without any structural alteration or creation of microstructural defects, according to Hume-Rothery rules (ionic radius difference less than 15% for the formation of solid solution). In addition, Ti has a higher valence electrons when compared to Zn, hence its dissolution into ZnO host lattice may reduce the electrical resistivity and improve the electrical properties of ZnO by providing additional free electrons [12] , [13] .…”

Section: Introductionmentioning

confidence: 99%

Effect of growth time on Ti-doped ZnO nanorods prepared by low-temperature chemical bath deposition

Bidier

Hashim

Al-Diabat

et al. 2017

Physica E: Low-dimensional Systems and Nanostructures

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Ti-doped ZnO nanorod arrays were grown onto Si substrate using chemical bath deposition (CBD) method at 93 °C. To investigate the effect of time deposition on the morphological, and structural properties, four Ti-doped ZnO samples were prepared at various deposition periods of time (2, 3.5, 5, and 6.5 h). FESEM images displayed high-quality and uniform nanorods with a mean length strongly dependent upon deposition time; i.e. it increases for prolonged growth time. Additionally, EFTEM images reveal a strong erosion on the lateral side for the sample prepared for 6.5 h as compared to 5 h. This might be attributed to the dissolution reaction of ZnO with for prolonged growth time. XRD analysis confirms the formation of a hexagonal wurtzite-type structure for all samples with a preferred growth orientation along the c-axis direction. The (100) peak intensity was enhanced and then quenched, which might be the result of an erosion on the lateral side of nanorods as seen in EFTEM. This study confirms the important role of growth time on the morphological features of Ti-doped ZnO nanorods prepared using CBD.

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“…Ti has the capability of oxygen gathering effect. Ti has been reported to exhibit smooth structural incorporation within ZnO lattice due to its ionic-size (Ti 4+ ) is smaller than the Zn 2+ [139], and its higher valence electrons may lessen the electrical resistivity and enhance electrical characteristics when dissipated into ZnO lattice [140]. The Fourier transform infrared spectroscopy (FTIR) of the Ti-doped ZnO is shown in Fig.…”

Section: B Doping and Its Significance In Zno Based Rrammentioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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Influence of TiO2 buffer layer and post-annealing on the quality of Ti-doped ZnO thin films

Cited by 23 publications

References 32 publications

Enhanced photoluminescence properties of Cu-doped ZnO thin films deposited by simultaneous RF and DC magnetron sputtering

Enhanced photoluminescence properties of Cu-doped ZnO thin films deposited by simultaneous RF and DC magnetron sputtering

Effect of growth time on Ti-doped ZnO nanorods prepared by low-temperature chemical bath deposition

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

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