Microstructural Characterization of Electrosynthesized ZnTe Thin Films

Mahalingam, T.; John, V.; Ravi, G.; Sebastián, P.J.

doi:10.1002/1521-4079(200204)37:4<329::aid-crat329>3.0.co;2-u

Cited by 40 publications

(19 citation statements)

References 18 publications

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“…In addition, the dislocation can be situated in the domain volume. Evaluation of the average density of such dislocations (r V ) as well as the total concentration of dislocations (r T ) were carried out using the e and L values [26,27]. Besides, the concentration of SF (a) in the films was calculated by the method described in [25,26].…”

Section: Methodsmentioning

confidence: 92%

Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation

Kosyak

Opanasyuk

Bukivskij

et al. 2010

Journal of Crystal Growth

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a b s t r a c tThe polycrystalline CdTe films were deposited by the close-spaced vacuum evaporation at the different substrate temperatures (150-550 1C). The X-ray diffraction measurements of structural and substructural properties of these films were carried out to study their phase composition and texture. The films' parameters such as the coherent scattering domain size, microdeformation level and mean density of dislocations were determined based on the broadening of diffraction peaks. In this case the Hall and three-fold convolution approximations were used. Surface morphology, grain size and growth mechanism of the films were determined by the scanning electron microscopy. The low temperature photoluminescence measurements allowed us to establish the correlation between the point and extended defect structure on the one hand and the growth conditions on the other. As a result, the growth conditions of CdTe polycrystalline films with fairly good crystal and optical quality were determined.

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Section: Methodsmentioning

confidence: 92%

Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation

Kosyak

Opanasyuk

Bukivskij

et al. 2010

Journal of Crystal Growth

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“…The reliefs of the stresses built up in the films leads to reduction in the interplanar spacing, and thus minimize the stacking fault probability in the films. 26) During the increase of the film thickness, the dislocation density and the microstrain are reduced because stress is released in the films by simultaneously annealing during deposition. Also the crystallite sizes initially gradual increase with film thickness and finally to a saturation value.…”

Section: Structural Propertiesmentioning

confidence: 99%

“…The cumulative effect of the decrease in the microstrain and the dislocation density can be used to explain the gradual reduction in the stacking fault of the films with increasing film thickness. 26) Figure 7 shows the dependence of resistivity () and carrier concentration (N) on the thickness of the NiO films that were deposited on substrate at the temperatures of 303 and 673 K. Figure 7(a) shows the resistivity and carrier concentration of the as-deposited films prepared on unheated substrate (303 K). The resistivity is seen to increase from 0:84 Â 10 À2 to 2:2 Â 10 À2 m as the film thickness is increased from 50 to 300 nm.…”

Section: Structural Propertiesmentioning

confidence: 99%

Effect of Film Thickness on Structural and Electrical Properties of Sputter-Deposited Nickel Oxide Films

Chen

Hwang

2005

Mater. Trans.

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This work studies dependences of resistivity, carrier concentration, mobility and structural properties on the thickness of nickel oxide (NiO) films deposited onto glass substrates by RF magnetron sputtering in a pure oxygen atmosphere at an RF power 200 W. The electrical properties were measured by Hall Effect measurements. The X-ray diffraction (XRD) and transmission electron microscope (TEM) analyses of nickel oxide films indicates that these films are polycrystalline when the samples are prepared with an unheated substrate (T s ¼ 303 K) and using a substrate at a higher substrate temperature (T s ¼ 673 K). The thickness of the films varied in the range from 50 to 300 nm. The variations of the microstructural parameters, such as crystallite size (L), dislocation density (), stacking fault probability (), strain (") and density (D), with film thickness and substrate temperature were investigated. The results show the crystallite sizes increaser as the thickness of the film increases. The variation of the dislocation density and the stacking fault probabilities and strain decrease as the thickness increases. The resistivity of NiO film is increased with an increase in film thickness, which is related to the decrease of carrier concentration with film thickness. The NiO film with a thickness of 200 nm has a minimum resistivity of 0:69 Â 10 À2 m when deposited at substrate temperature of 303 K.

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“…The LS in monocrystals and films ZnTe were studied by SCLC CVC in [24,63,64]. Authors [24] have found the trap parameters in monocrystalline samples by the voltage of complete trap filling-in: Et = 0.17 eV and Nt = 10 22 m -3 .…”

Section: Znte Filmsmentioning

confidence: 99%

“…As is seen from the Table 3, the trap concentration in ZnTe films is significantly lesser than that in condensates prepared by laser evaporation, electro-deposition methods and even in the monocrystalline material [23,[63][64]. It shows a high structural perfectness and stoichiometry of the layers.…”

Section: Znte Filmsmentioning

confidence: 99%

Injection and Optical Spectroscopy of Localized States in II-VI Semiconductor Films

Kurbatov¹,

Opanasyuk²,

Khlyap³

2012

Advanced Aspects of Spectroscopy

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Microstructural Characterization of Electrosynthesized ZnTe Thin Films

Cited by 40 publications

References 18 publications

Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation

Study of the structural and photoluminescence properties of CdTe polycrystalline films deposited by close-spaced vacuum sublimation

Effect of Film Thickness on Structural and Electrical Properties of Sputter-Deposited Nickel Oxide Films

Injection and Optical Spectroscopy of Localized States in II-VI Semiconductor Films

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