Microstructural characterization of thick ZnTe epilayers grown on GaSb, InAs, InP and GaAs (100) substrates

One-step fast deposition of thick epitaxial CdZnTe film on (001)GaAs by close-spaced sublimation

“…Misfit dislocations are reported to be either 90 Lomer edge dislocations or 60 dislocations. 26,35,36 The one with b ¼ a/2[110] is the Lomer type and the one with b ¼ a/6[ 1 1 2] is the 60 type.…”

Atomic-Scale Characterization of II–VI Compound Semiconductors

“…12,13 Substrates that have been studied include GaSb (0.13% mismatch with ZnTe), InAs (0.75%), InP (3.85%), and GaAs (7.30%). All of these ZnTe samples ($2.4 lm thick) were grown by molecular beam epitaxy (MBE) under virtually identical conditions, so any differences in materials properties and microstructure can be attributed to interfacial strain caused primarily by lattice-mismatch differences, as well as thermal expansion coefficients and growth temperature.…”

“…Analysis of the defect types and separation along the interface was then used to estimate the residual interfacial strain, which was found to be $0.01% for the ZnTe/InP sample and $0.09% for the ZnTe/GaAs sample. 13 Thus, these interfaces could be regarded as being completely relaxed to within experimental error.…”

“…Conversely, the large lattice-constant mismatch between CdTe and Si represents a 14 (b) high-resolution electron micrograph of ZnTe/GaAs(100) interface identifying Lomer edge (LO) and 60°perfect dislocations. 13 considerable barrier to successful heteroepitaxial growth. High-resolution observations of CdTe/ Si(100) heterostructures initially revealed extensive {111}-type lamellar twinning as well as doubledomain CdTe growth, which was attributed to the rotational symmetry of the clean, reconstructed Si(100) surface.…”

Atomic-Resolution Structure Imaging of Misfit Dislocations at Heterovalent II–VI/III–V Interfaces

“…2−16 Heterovalent structures, achieved, for example, by integrating II−VI and III−V compound semiconductors with different valence states, provide many possibilities for further developments in optoelectronic devices. 17,18 For example, a combination of II−VI/III−V materials could enable multijunction solar cells that access a wider range of the solar energy spectrum. 19,20 Moreover, the interfaces between heterovalent materials have bonding mismatch that may provide further opportunities arising from the introduction of interfacial electrostatic dipoles; for instance, a recent theoretical paper proposed the existence of a two-dimensional electron gas at the CdTe(111)/ InSb(111) polar interface.…”