Microstructural, electrical, and transmittance properties of PbTiO3 films grown on p-InP (100) substrates at low temperature

Kim, T.W; Yom, Sue S.

doi:10.1016/s0022-3697(98)00351-5

Cited by 3 publications

(1 citation statement)

References 17 publications

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“…In the literature, mainly liquid PbEt 4 and Ti(O i Pr) 4 compounds were used as precursors for MOCVD growth of PTO films by bubbling of carrier gas through containers of liquid precursors [5,6,[12][13][14][15][16]. However, some other pairs of Pb and Ti precursors have been also studied: Pb(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and Ti(O i Pr) 4 [17][18][19][20], (C 2 H 5 ) 3 PbOCH 2 C(CH 3 ) 3 and Ti(O i Pr) 4 [21], Pb(OAc) 2 and Ti(OnBu) 4 [22], PbEt 4 and Ti-npropoxyde [23] or PbEt 4 and TiCl 4 [24]. Only several works [25,26] can be found on the use of solid Pb(thd) 2 and Ti(O i Pr) 2 (thd) 2 or TiO(thd) 2 precursors for PTO depositions.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric PbTiO₃Films Grown by Pulsed Liquid Injection Metalorganic Chemical Vapour Deposition

et al. 2007

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The influence of various deposition conditions (deposition temperature, partial oxygen pressure and solution composition) to the growth of ferroelectric PbTiO 3 (PTO) films by pulsed liquid injection metalorganic chemical vapour deposition (MOCVD) was examined. Films were grown on LaAlO 3 (001), SrTiO 3 (001) and sapphire (R-plane) substrates. Pb(thd) 2 and Ti(O i Pr) 2 (thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) dissolved in toluene were used as precursors. The evolution of film composition, surface morphology and microstructure with deposition conditions was studied. The film microstructure was characterized by X-ray diffraction (XRD) in Bragg-Brentano and Schulz geometries and by Raman spectroscopy. Epitaxial films on perovskite substrates consisted of dominant c-axis and minor a-axis textured zones (c-domains and a-domains). The amount of a-domains in films depended mainly on deposition temperature. The twinning in a-and c-domains was observed and twinning (tilt) angles depended on deposition conditions and substrate. Fully twinned or partially twinned films were obtained in varying deposition conditions. The best quality epitaxial films were obtained on SrTiO 3 and LaAlO 3 at 650 °C. Films on sapphire were mainly polycrystalline.

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Section: Introductionmentioning

confidence: 99%

Ferroelectric PbTiO₃Films Grown by Pulsed Liquid Injection Metalorganic Chemical Vapour Deposition

et al. 2007

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Atomic layer deposition and post-deposition annealing of PbTiO3 thin films

Harjuoja¹,

Kosola²,

Putkonen³

et al. 2006

Thin Solid Films

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Characterization of Highly-Oriented Ferroelectric Pb_xBa_1−x TiO₃ Thin Films Grown by Metalorganic Chemical Vapor Deposition

2005

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Pb x Ba 1−x TiO 3 (0.2 ഛ x ഛ 1) thin films were deposited on single-crystal MgO as well as amorphous Si 3 N 4 /Si substrates using biaxially textured MgO buffer templates, grown by ion beam-assisted deposition (IBAD). The ferroelectric films were stoichiometric and highly oriented, with only (001) and (100) orientations evident in x-ray diffraction (XRD) scans. Films on biaxially textured templates had smaller grains (60 nm average) than those deposited on single-crystal MgO (300 nm average). Electron backscatter diffraction (EBSD) has been used to study the microtexture on both types of substrates and the results were consistent with x-ray pole figures and transmission electron microscopy (TEM) micrographs that indicated the presence of 90°domain boundaries, twins, in films deposited on single-crystal MgO substrates. In contrast, films on biaxially textured substrates consisted of small single-domain grains that were either c or a oriented. The surface-sensitive EBSD technique was used to measure the tetragonal tilt angle as well as in-plane and out-of-plane texture. High-temperature x-ray diffraction (HTXRD) of films with 90°domain walls indicated large changes, as much as 60%, in the c and a domain fractions with temperature, while such changes were not observed for Pb x Ba 1−x TiO 3 (PBT) films on biaxially textured MgO/Si 3 N 4 /Si substrates, which lacked 90°domain boundaries.

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Microstructural, electrical, and transmittance properties of PbTiO3 films grown on p-InP (100) substrates at low temperature

Cited by 3 publications

References 17 publications

Ferroelectric PbTiO₃Films Grown by Pulsed Liquid Injection Metalorganic Chemical Vapour Deposition

Ferroelectric PbTiO₃Films Grown by Pulsed Liquid Injection Metalorganic Chemical Vapour Deposition

Atomic layer deposition and post-deposition annealing of PbTiO3 thin films

Characterization of Highly-Oriented Ferroelectric Pb_xBa_1−x TiO₃ Thin Films Grown by Metalorganic Chemical Vapor Deposition

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Microstructural, electrical, and transmittance properties of PbTiO3 films grown on p-InP (100) substrates at low temperature

Cited by 3 publications

References 17 publications

Ferroelectric PbTiO3Films Grown by Pulsed Liquid Injection Metalorganic Chemical Vapour Deposition

Ferroelectric PbTiO3Films Grown by Pulsed Liquid Injection Metalorganic Chemical Vapour Deposition

Atomic layer deposition and post-deposition annealing of PbTiO3 thin films

Characterization of Highly-Oriented Ferroelectric PbxBa1−x TiO3 Thin Films Grown by Metalorganic Chemical Vapor Deposition

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Ferroelectric PbTiO₃Films Grown by Pulsed Liquid Injection Metalorganic Chemical Vapour Deposition

Ferroelectric PbTiO₃Films Grown by Pulsed Liquid Injection Metalorganic Chemical Vapour Deposition

Characterization of Highly-Oriented Ferroelectric Pb_xBa_1−x TiO₃ Thin Films Grown by Metalorganic Chemical Vapor Deposition