Microstructural evolution in H ion induced splitting of freestanding GaN

Moutanabbir, Oussama; Scholz, Roland; Senz, Stephan; Gösele, U.; Chicoine, M.; Schiettekatte, F.; Süßkraut, F.; Krause‐Rehberg, R.

doi:10.1063/1.2955832

Cited by 37 publications

(36 citation statements)

References 22 publications

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“…Positron annihilation is a powerful technique to evaluate vacancy-type defects in semiconductors, 16,17 and defects in group-III nitrides have been successfully investigated using this method. [18][19][20][21][22][23][24] In this study, we used a monoenergetic positron beam to probe native vacancies in Al 0.1 Ga 0.9 N layers grown on Si substrates. We showed that the obtained results provided additional insights to explain the change in the leakage blocking capability of these layers.…”

Section: Introductionmentioning

confidence: 99%

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Uedono

Zhao

Simoen

2016

Journal of Applied Physics

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Articles you may be interested inProbing the effect of point defects on the leakage blocking capability of Al 0.1 Ga 0.9 N/Si structures using a monoenergetic positron beam ) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al 0.1 Ga 0.9 N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (C N s). The charge state of the vacancies was positive because of the electron transfer from the defects to C N -related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by C N -related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and C N -related acceptors. Published by AIP Publishing. [http://dx

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Section: Introductionmentioning

confidence: 99%

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Uedono

Zhao

Simoen

2016

Journal of Applied Physics

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“…All these parameters strongly depend on the type of semiconductor materials used for splitting. In contrast to the cases of Si, SiC, Ge, GaAs and InP, only a few studies of H-implantation-induced GaN layer splitting were reported [2][3][4][5][6][7][8]. Tong et al [9] reported that blister formation and layer splitting have the same activation energy, indicating that formation of optically detectable surface blisters is regarded as onset of microcrack formation.…”

Section: Introductionmentioning

confidence: 92%

Study of surface blistering in GaN by hydrogen implantation at elevated temperatures

Wang

Zhang

2015

Thin Solid Films

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“…Positron annihilation, a powerful technique for evaluating vacancy-type defects in semiconductors, 17,18 has been used to investigate defects in group-III nitrides. [19][20][21][22][23][24][25][26] In the present study, we used a monoenergetic positron beam to probe native vacancies in Mg-doped GaN grown by NH 3 -based MBE.…”

Section: à3mentioning

confidence: 99%

Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

Uedono

Malinverni

Martin

et al. 2016

Journal of Applied Physics

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Vacancy-type defects in Mg-doped GaN were probed using a monoenergetic positron beam. GaN films with a thickness of 0.5–0.7 μm were grown on GaN/sapphire templates using ammonia-based molecular beam epitaxy and characterized by measuring Doppler broadening spectra. Although no vacancies were detected in samples with a Mg concentration [Mg] below 7 × 1019 cm−3, vacancy-type defects were introduced starting at above [Mg] = 1 × 1020 cm−3. The major defect species was identified as a complex between Ga vacancy (VGa) and multiple nitrogen vacancies (VNs). The introduction of vacancy complexes was found to correlate with a decrease in the net acceptor concentration, suggesting that the defect introduction is closely related to the carrier compensation. We also investigated Mg-doped GaN layers grown using In as the surfactant. The formation of vacancy complexes was suppressed in the subsurface region (≤80 nm). The observed depth distribution of defects was attributed to the thermal instability of the defects, which resulted in the introduction of vacancy complexes during the deposition process.

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Microstructural evolution in H ion induced splitting of freestanding GaN

Cited by 37 publications

References 22 publications

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Study of surface blistering in GaN by hydrogen implantation at elevated temperatures

Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

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