Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

Abstract

Articles you may be interested inProbing the effect of point defects on the leakage blocking capability of Al 0.1 Ga 0.9 N/Si structures using a monoenergetic positron beam ) were grown on Si substrates by metalorganic vapor phase epitaxy. The major defect species in Al 0.1 Ga 0.9 N was determined to be a cation vacancy (or cation vacancies) coupled with nitrogen vacancies and/or with carbon atoms at nitrogen sites (C N s). The charge state of the vacancies was positive because of the electron transfer from the defects to C N -related acceptors. The defect charge state was changed from positive to neutral when the sample was illuminated with photon energy above 1.8 eV, and this energy range agreed with the yellow and blue luminescence. For the sample with high [C], the charge transition of the vacancies under illumination was found to be suppressed, which was attributed to the trapping of emitted electrons by C N -related acceptors. With increasing [C], the breakdown voltage under the reverse bias condition increased. This was explained by the trapping of the injected electrons by the positively charged vacancies and C N -related acceptors. Published by AIP Publishing. [http://dx

Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si

“…As reported in Ref. [23], a denser [C] in GaN films improves the leakage current. These experimental facts indicate that DD-rich semi-insulating GaN is preferable for AlGaN/GaN-HFETs, because such GaN can prevent both current collapse and buffer leakage.…”

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