1986
DOI: 10.1007/bf00553278
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Microstructural evolution in reaction-bonded silicon carbide

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Cited by 238 publications
(108 citation statements)
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“…8). As testified in Ness JN and Page TF [36], the graphite was trapped by the growing grains before its reaction with liquid silicon during RB-SiC fabrication. Therefore, those two peaks should be caused by the D peak (disorder-induced A1g mode) and G peak (E2g mode) of graphite, respectively [37].…”
Section: Raman Spectroscopy Analysis Of Rb-sicmentioning
confidence: 97%
“…8). As testified in Ness JN and Page TF [36], the graphite was trapped by the growing grains before its reaction with liquid silicon during RB-SiC fabrication. Therefore, those two peaks should be caused by the D peak (disorder-induced A1g mode) and G peak (E2g mode) of graphite, respectively [37].…”
Section: Raman Spectroscopy Analysis Of Rb-sicmentioning
confidence: 97%
“…Infiltrated Si reacts with carbon to form SiC. Reactive infiltration is used to process the so-called "reaction-bonded silicon carbide" or SiC composites [28,29].…”
Section: Wetting In Infiltrationmentioning
confidence: 99%
“…Silicon carbide the formation of silicon-carbide particles that bond the prethen precipitated in regions of lower temperature. [6,7,8] viously existing SiC grains. In another approach, carbonaHowever, there has been very little effort to study the ceous materials, such as carbon fiber tow, carbon fiber cloth, most important step in the conversion process: the process or felt, are infiltrated by molten silicon in vacuum to form of silicon infiltration through the porous carbon preforms.…”
Section: Introductionmentioning
confidence: 99%
“…The siliconization mechanism has been extensively studMessner and Chiang [9] formulated an analytical model ied via experiments on isolated carbon fibers or plates. [4][5][6][7][8][9] based on Darcy's law. [10] This model incorporated a varying Since molten silicon wets carbon, it wicks up into the micropermeability.…”
Section: Introductionmentioning
confidence: 99%