2009
DOI: 10.1007/s10854-009-9890-7
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Microstructural properties of ZnO:Sn thin films deposited by intermittent spray pyrolysis process

Abstract: International audienceZinc oxide films have been prepared via spray pyrolysis using a perfume atomizer. ZnCl2 has been used as precursor. The influence of the precursor solution and dopant concentration has been investigated. Homogeneous films are obtained with a precursor concentration ranging between 0.3 and 0.4 M and a SnCl2 dopant concentration of 1-2%. The films exhibit broad band gaps and small conductivity. The microstructural properties of these films have been compared with that of films deposited usi… Show more

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Cited by 4 publications
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“…In estimating the optical energy band gap of semiconducting materials, UV-vis spectra play a critical role. The following expression depicts the optical band gap: 16,17)…”
Section: Resultsmentioning
confidence: 99%
“…In estimating the optical energy band gap of semiconducting materials, UV-vis spectra play a critical role. The following expression depicts the optical band gap: 16,17)…”
Section: Resultsmentioning
confidence: 99%