Microstructural revolution of CIGS thin film using CuInGa ternary target during sputtering process

RETRACTED: Analysis on corrosion resistant of electrodeposited ternary Co-W-P alloy

“…The results were submitted to non-linear regression analysis to obtain multiple degrees of each parameter. Estimates of coefficients with levels higher than 95% (P <0.05) were included in the highlighted model [17]. The polarisation resistance (Rp) was represented in the form of the independent function factors of a mathematical second order model.…”

“…Tungsten and phosphorus should deposit in aqueous solutions containing iron group metals (Fe, Co, Ni), which is referred to as induced co-deposition. Therefore, the effects of dispersion concentration in the electrolytic bath on the stability of the various suspensions, as well as the morphology, chemical composition, antibacterial activity and structural coatings obtained using an electrolytic bath of suspended nanoparticles, are important [17].…”

Fabrication of Cu(In,Ga)S x Se2−x films by one-step sputtering with elevated substrate temperature and their characterization

“…In and Ga loss during the sputtering process have been reported by several groups. 15,33,34) It is estimated the higher vapor pressure and higher sputtering rate of In and Ga than that of Cu were the reason behind the increase of Cu/(In + Ga) ratio. Yu et al considered that the vapor pressure of In is higher than that of Cu at high temperatures.…”

“…15) Liao et al presumed that the high energy accumulated on the surface of the Cu-In-Ga targets induces a loss of In material which is favored by the low melting temperature and high sputtering rate of this element. 33) For the CIGSe film sputtered at 400 °C, the Cu/(In + Ga) ratio was 1.15. The Cu/(In + Ga) ratio over 1 suggests the existence of Cu-rich secondary phases.…”

Estructura cristalina del compuesto Cu2ZnSnSe4 depositado por co-evaporación: análisis comparativo estannita-kesterita

“…Se puede observar que la estructura cristalina de la kesterita de CZTSe (Figura 2) es similar a la estructura calcopirita de los compuestos CIGS donde el indio y el galio se sustituye por zinc y estaño (Mise & Nakada 2009, Liao et al 2012. De igual forma, a la estructura del ZnO (Wei et al 2009, Lemlikchi et al 2010 o ZnS (Muthukumaran & Ashok 2013, Sookhakian et al 2014, los aniones y cationes del cristal CZTSe de kesterita que se encuentran situados en un entorno de unión tetraédrica con un modelo de apilamiento que es análogo a la blenda de zinc (Du et al 2012, Jiang et al 2013.…”