Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets

Tseng, Chung-Jen; Lin, Jiaping; Chang, Julia Yu Fong; Chyou, San-Der; Peng, Kun

doi:10.1016/j.apsusc.2012.02.061

Cited by 27 publications

(16 citation statements)

References 18 publications

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“…This measurement result was consistent with the observation in Ref. [25]. The sputtering power dependence of crystallinity and crystallite sizes for GZO thin films was also revealed by their SEM micrographs.…”

Section: Surface Morphologysupporting

confidence: 91%

Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films

Tien

Tsai

et al. 2015

Applied Surface Science

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Section: Surface Morphologysupporting

confidence: 91%

Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films

Tien

Tsai

et al. 2015

Applied Surface Science

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“…there is an increase in the optical band gap of the film. The optical energy gap can be determined using Equation 1, which relates the absorption coefficient (  ) and the gap energy ( g E ) [15]. From Figure 2 it is possible to determine the energy gap by extrapolating the linear position of the graph to the point where the absorption coefficient is zero, since at this point .…”

Section: Uv-vis-nir Analysismentioning

confidence: 99%

“…Recently, the influence of the Al doping concentrations on the optical and electrical properties of ZnO:Al films has been studied [3,13,14]. More recently, several studies have focused on the influence of doping levels on the surface morphology of the films [4,15]. In the present work intrinsic and (slightly) aluminum-doped ZnO thin films were synthesized by reactive RF magnetron sputtering to investigate the influence of the Al content, principally on the structural and surface morphology.…”

Section: Introductionmentioning

confidence: 97%

Al-Doping Effect on the Surface Morphology of ZnO Films Grown by Reactive RF Magnetron Sputtering

Silva¹,

Chaves²,

Silva³

et al. 2013

MSA

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Zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass and silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both films were deposited at a growth rate of 12.5 nm/min to a thickness of around 750 nm. In the visible region, the films exhibit optical transmittances which are greater than 80%. The optical energy gap of ZnO films increased from 3.28 eV to 3.36 eV upon doping with Al. This increase is related to the increase in carrier density from 5.9 × 10 18 cm −3 to 2.6 × 10 19 cm −3. The RMS surface roughness of ZnO films grown on glass increased from 14 to 28 nm even with only 0.9% at Al content. XRD analysis revealed that the ZnO films are polycrystalline with preferential growth parallel to the (002) plane, which corresponds to the wurtzite structure of ZnO.

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“…They have excellent photoelectric properties such as high conductivity, high transmittance in the visible region, high absorption in the ultraviolet region and high reflection in the infrared region, 1 making them suitable for transparent electrodes, lightemitting diodes, displays, solar cells, thin-film transistors, transparent heating elements and transparent heat reflective materials devices. [2][3][4][5][6] In comparison with indium tin oxide (ITO), which is a most commonly used transparent conductive film material in production, ZnO thin film has excellent visible light transmittance and good electrical conductivity close to ITO, furthermore, it has the advantages of abundant raw materials, low price, nontoxicity and environmentfriendliness. As a result, ZnO-based transparent conductive film is expected to be a substitute for ITO film.…”

Section: Introductionmentioning

confidence: 99%

Structure, optical and electrical properties of Nb-doped ZnO transparent conductive thin films prepared by co-sputtering method

Liu

Wang

et al. 2019

J. Adv. Dielect.

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Nb-doped ZnO thin films were fabricated on glass substrates by using co-sputtering with direct-current and radio frequency magnetron sputtering. The structures, optical and electrical performances of Nb-doped ZnO thin films were investigated. The results showed that all thin films have (0 0 2) c-axis preferential orientation. The minimum resistivity of 2:12 Â 10 À3 Ω cm and the maximum carrier concentration of 2:39 Â 10 19 cm À3 were obtained at the direct-current sputtering power of 10 W, respectively. Nb-doped ZnO thin films have also shown high average transmittance of 89.6%, and lower surface roughness of 2.74 nm. Meanwhile, a distinct absorption edge in the ultraviolet range of 300-400 nm was observed in absorbance, the optical band gap of Nb-doped ZnO thin films illustrates an increased tendency with increasing Nb concentration.

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Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets

Cited by 27 publications

References 18 publications

Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films

Effect of RF power on the optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films

Al-Doping Effect on the Surface Morphology of ZnO Films Grown by Reactive RF Magnetron Sputtering

Structure, optical and electrical properties of Nb-doped ZnO transparent conductive thin films prepared by co-sputtering method

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