Microstructure and dielectric properties of amorphous BaSm2Ti4O12 thin films for MIM capacitor

Jeong, Young Hun; Lim, Jong Bong; Kim, Jae Chul; Nahm, Sahn; Sun, Ho‐Jung; Lee, Hwack Joo

doi:10.1016/j.jeurceramsoc.2006.11.001

Cited by 4 publications

(4 citation statements)

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“…The voltage and temperature stability of BSTA thin films were also analyzed to establish their reliability for use in integrated electronic applications. formulation [17,18] of:…”

Section: Resultsmentioning

confidence: 99%

“…The values of STA and BSTA50 are comparable to most of the other high-k materials [17] . The value of BTA is sufficiently low to satisfy the requirement of the International Roadmap for semiconductors (ITRS) [18] . Figure 5 shows capacitance densities of BSTA thin films as a function of measurement temperature.…”

Section: Resultsmentioning

confidence: 99%

“…The capacitance densities decreased as the measurement temperature increased. Temperature coefficients of capacitance (TCC) were calculated from the equation, ΔC/(C 0 ΔT) [17,18] , where ΔC is the change in capacitance relative to capacitance C 0 at 25 o C and ΔT is the change in temperature relative to 25 o C. Calculated TCCs of STA, BSTA50 and BTA are -1050, -1200 and -230 ppm/ o C. Among them, BTA shows the best temperature reliability for integrated capacitor applications.…”

Section: Resultsmentioning

confidence: 99%

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Electrical Properties of (Bax,Sr1-x)Ta2O6 Thin Films Using Sol-Gel Method

Echizen

Nishida

et al. 2010

Trans. Mat. Res. Soc. Japan

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Electrical properties of (Ba x ,Sr 1-x)Ta 2 O 6 (x=0, 0.5, 1) thin films fabricated by the Sol-Gel method were investigated. SrTa 2 O 6 and (Ba 0.5 ,Sr 0.5)Ta 2 O 6 thin films were found to have similar crystal structures in this study. The quadratic voltage capacitance coefficients (VCC) and the temperature coefficients of capacitance (TCC) were found to be very close for these two thin films. However, a higher dielectric constant of about 130 was obtained for the (Ba 0.5 ,Sr 0.5)Ta 2 O 6 thin film. A low VCC of about 26 ppm/V 2 and TCC of about-230 ppm/ o C were obtained for the BaTa 2 O 6 thin film. The lowest leakage current density of about 10-8 A/cm 2 at 500 kV/cm was obtained in SrTa 2 O 6 thin film among all thin films investigated. It is considered to be due to the best surface morphology.

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“…The voltage and temperature stability of BSTA thin films were also analyzed to establish their reliability for use in integrated electronic applications. formulation [17,18] of:…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Electrical Properties of (Bax,Sr1-x)Ta2O6 Thin Films Using Sol-Gel Method

Echizen

Nishida

et al. 2010

Trans. Mat. Res. Soc. Japan

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“…This suggests that the mechanism of the change in " r under applied voltage in BTA is different from those in other compositional thin films. 17,18) The change in dielectric constants depending on electric field was fitted with the formulation 18,19) Á" r…”

Section: Effects Of Composition On Electrical Properties Of Bsta Thin...mentioning

confidence: 99%

Annealing and Composition Effects of (Ba_xSr_1-x)Ta₂O₆ Thin Films Fabricated by Sol–Gel Method

Nishida

Echizen

et al. 2010

Jpn. J. Appl. Phys.

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The annealing atmosphere effects and composition effects on the electrical properties of five compositions of (Ba x Sr1-x )Ta2O6 thin films were investigated. O2 atmosphere annealing prevented the diffusion of Ti from the substrates into thin films and thus improved the dielectric properties of thin films. Thin films of all compositions show dielectric constants higher than 60 and loss tangents lower than 1%. Sr substituted for Ba in BaTa2O6 thin films showed a strong influence on the material properties. Among the samples, (Ba0.75Sr0.25)Ta2O6 thin film shows good bias stability, a high dielectric constant of about 65, low loss tangent of about 0.9% and low leakage current of about 10-7 A/cm2, and is regarded as the most promising for application in next-generation miniaturization.

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Optical characterization of BaSm2Ti4O12 thin films by spectroscopic ellipsometry

et al. 2009

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Microstructure and dielectric properties of amorphous BaSm2Ti4O12 thin films for MIM capacitor

Cited by 4 publications

References 12 publications

Electrical Properties of (Ba<sub><i>x</i></sub>,Sr<sub>1-<i>x</i></sub>)Ta<sub>2</sub>O<sub>6</sub> Thin Films Using Sol-Gel Method

Electrical Properties of (Ba<sub><i>x</i></sub>,Sr<sub>1-<i>x</i></sub>)Ta<sub>2</sub>O<sub>6</sub> Thin Films Using Sol-Gel Method

Annealing and Composition Effects of (Ba_xSr_1-x)Ta₂O₆ Thin Films Fabricated by Sol–Gel Method

Optical characterization of BaSm2Ti4O12 thin films by spectroscopic ellipsometry

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Microstructure and dielectric properties of amorphous BaSm2Ti4O12 thin films for MIM capacitor

Cited by 4 publications

References 12 publications

Electrical Properties of (Ba<sub><i>x</i></sub>,Sr<sub>1-<i>x</i></sub>)Ta<sub>2</sub>O<sub>6</sub> Thin Films Using Sol-Gel Method

Electrical Properties of (Ba<sub><i>x</i></sub>,Sr<sub>1-<i>x</i></sub>)Ta<sub>2</sub>O<sub>6</sub> Thin Films Using Sol-Gel Method

Annealing and Composition Effects of (BaxSr1-x)Ta2O6 Thin Films Fabricated by Sol–Gel Method

Optical characterization of BaSm2Ti4O12 thin films by spectroscopic ellipsometry

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Annealing and Composition Effects of (Ba_xSr_1-x)Ta₂O₆ Thin Films Fabricated by Sol–Gel Method