1990
DOI: 10.1002/eej.4391100103
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Microstructure and electrical conduction in RuO2 thick‐film resistors

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Cited by 5 publications
(4 citation statements)
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“…Therefore, the conduction between ruthenium oxide and glass is significantly concerned with the piezoresistive effect. Semiconducting, hopping or tunneling conduction model at the interface between RuO 2 and glass or ruthenium diffusion layer in glass has been proposed for this material system 6–13 . These conduction models are, however, mostly deduced by the relationship between the macroscopic electrical conductivity and other bulk properties such as temperature coefficient of resistance properties.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the conduction between ruthenium oxide and glass is significantly concerned with the piezoresistive effect. Semiconducting, hopping or tunneling conduction model at the interface between RuO 2 and glass or ruthenium diffusion layer in glass has been proposed for this material system 6–13 . These conduction models are, however, mostly deduced by the relationship between the macroscopic electrical conductivity and other bulk properties such as temperature coefficient of resistance properties.…”
Section: Introductionmentioning
confidence: 99%
“…A TFR has unique electrical‐conductive characteristics—even at lower concentrations in ruthenium oxide, it provides higher electrical conductivity than the threshold of percolative conduction 1 . Semiconducting, hopping, and tunneling conduction models at the interface between ruthenium oxide and glass or a ruthenium diffusion layer in glass have been proposed for this material system 6–13 . These conduction models are, however, mostly deduced by the relationship between macroscopic electrical conductivity and the other bulk properties such as temperature coefficient of resistance characteristics; few research results have reported on microanalytical investigations into an interface or reaction layer between the conductive ruthenium oxide and the glass insulator.…”
Section: Introductionmentioning
confidence: 99%
“…1 Semiconducting, hopping, and tunneling conduction models at the interface between ruthenium oxide and glass or a ruthenium diffusion layer in glass have been proposed for this material system. [6][7][8][9][10][11][12][13] These conduction models are, however, mostly deduced by the relationship between macroscopic elec-trical conductivity and the other bulk properties such as temperature coefficient of resistance characteristics; few research results have reported on microanalytical investigations into an interface or reaction layer between the conductive ruthenium oxide and the glass insulator. We assume that a reaction layer near the interface of the composite is responsible for the piezoresistive characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…Only the sharp edges o f the glass particles deform and the glass particles basically remain their original shape and position and are sounded through the conductive particles. The conduction path is obviously formed by the conductive particle chain by particle to particle contact.Another one is still under debating due to the unclear conduction mechanism based on it[29,34]. In this model, the glass has relatively low viscosity at high temperature and deforms significantly.…”
mentioning
confidence: 99%