Microstructure and electrical conductivity of In-doped CdS thin films

Megahid, N. M.; Wakkad, M. M.; Shokr, E. Kh.; Abass, Noher Mohamad

doi:10.1016/j.physb.2004.08.013

Cited by 36 publications

(13 citation statements)

References 17 publications

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“…Some Au atoms may have occupied the lattice sites to play directly as a dopant. Au atoms can create impurities in the bandgap, but the observation is in agreement with the cases of In-doped CdS19 and Al- and Sb-doped CdTe20, which showed a decrease in activation energy with increasing dopant concentrations. In summary, the increase in conductance with Au embedment was analyzed, but a concrete conclusion cannot be elucidated at present and separate systematic study is necessary.…”

Section: Resultssupporting

confidence: 80%

Porous Au-embedded WO3 Nanowire Structure for Efficient Detection of CH4 and H2S

Vuong

Kim

2015

Sci Rep

151

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We developed a facile method to fabricate highly porous Au-embedded WO3 nanowire structures for efficient sensing of CH4 and H2S gases. Highly porous single-wall carbon nanotubes were used as template to fabricate WO3 nanowire structures with high porosity. Gold nanoparticles were decorated on the tungsten nanowires by dipping in HAuCl4 solution, followed by oxidation. The surface morphology, structure, and electrical properties of the fabricated WO3 and Au-embedded WO3 nanowire structures were examined by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and current–voltage measurements. Formation of a nanowire structure resulted in significant enhancement in sensing response to H2S and CH4 gases. Furthermore, Au embedment into the WO3 nanowire structures remarkably improved the performance of the sensors. The increase in response performance of sensors and adsorption–desorption kinetic processes on the sensing layers were discussed in relation with the role of Au embedment.

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Section: Resultssupporting

confidence: 80%

Porous Au-embedded WO3 Nanowire Structure for Efficient Detection of CH4 and H2S

Vuong

Kim

2015

Sci Rep

151

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“…Grain size variations in metal‐doped sulfide thin films are also seen in the works of Prathap et al . and Megahid et al . The average surface roughness ( R a ) of ZnS film is ~2.5 nm, whereas the root mean square ( R rms ) roughness is ~3.2 nm.…”

Section: Resultssupporting

confidence: 56%

“…B. Observed Cu2p 3/2,1/2 peaks at 932.5 and 952.4 eV without satellites are attributed to Cu + species . Zn2p core level spectra of ZnS and Cu/ZnS films displayed in Fig.…”

Section: Resultsmentioning

confidence: 93%

Studies of Cu-doped ZnS thin films prepared by sputtering technique

Sreedhar

Reddy

Bera

et al. 2016

Surf. Interface Anal.

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Radio frequency magnetron sputtering technique has been used to deposit Cu‐doped ZnS thin films on glass and n‐type Si(100) substrates at room temperature. Crystalline structure, surface morphology, and elemental oxidation states have been studied by X‐ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and X‐ray photoelectron spectroscopy. Ultraviolet–visible spectroscopy has been employed to measure the transmittance, reflectance, and absorbance properties of coated films. The deposited thin films crystallize in zinc blende or sphalerite phases as proved by X‐ray diffraction analysis. The intensity of diffraction peaks decreases with increasing the dopant concentrations. The predominant diffraction peak related to (111) plane of ZnS is observed at 28.52° along with other peaks. The peak positions are shifted to higher angles with an increase of Cu concentrations. X‐ray photoelectron spectroscopy studies show that Cu is present in +1 oxidation state. Transmittance, reflectance, and absorbance properties of the deposited films have a slight variation with dopant concentrations. Copyright © 2016 John Wiley & Sons, Ltd.

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“…The strong and broad peak for all films around 26.66° gives it is the preferred orientations along the (002) plane of hexagonal phase which also revealed the existence of better crystalline nature and it is suitable for photocatalytic reaction [36]. Megahid et al demonstrated that the diffractogram includes one characterizing peak for the preferred orientations (0 0 2) plane of CdS film at 400 °C [37]. The FWHM (Full Width at Half Maximum) of the XRD peaks was slightly changing by the dopant ratio owing to variations in grain size.…”

Section: Structural Studiesmentioning

confidence: 96%

Indium doping on the structural, surface and optical properties of CdS thin films prepared by ultrasonic spray pyrolysis method

Baturay¹

2017

Balıkesir Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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CdS nanostructures are important and useful materials for photovoltaic applications. In this paper, pure CdS and In doped CdS (CdS:In) thin films were fabricated on soda lime glass substrate using ultrasonic spray pyrolysis (USP) method, to investigate the effect In concentration on the structural behavior, surface and optical properties of the CdS thin films by X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and Ultraviolet-visible (Uv-vis)

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Microstructure and electrical conductivity of In-doped CdS thin films

Cited by 36 publications

References 17 publications

Porous Au-embedded WO3 Nanowire Structure for Efficient Detection of CH4 and H2S

Porous Au-embedded WO3 Nanowire Structure for Efficient Detection of CH4 and H2S

Studies of Cu-doped ZnS thin films prepared by sputtering technique

Indium doping on the structural, surface and optical properties of CdS thin films prepared by ultrasonic spray pyrolysis method

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