Microstructure and electrical properties of rare-earth oxides doped ZnO-based linear resistance ceramics

Wang, Jingjing; Zhu, Jianfeng; Zhou, Yong; Wang, Fen

doi:10.1007/s10854-014-2018-8

Cited by 17 publications

(5 citation statements)

References 17 publications

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“…The nonlinear Fig. 2 Results from EDS analysis of TiO 2 varistor ceramics doped with 0.40 mol% Sm 2 O 3 : a micrograph with marked points, b the corresponding EDS spectra coefficient is closely related to the barrier height [19]. Increase of U 0 will result in the increase of nonlinear coefficient, which is consistent with experimental result shown in Table 3.…”

Section: Resultssupporting

confidence: 83%

Influence of Sm2O3 on electrical performance of (Nb, Si)-doped TiO2-based varistor

Zhu

Xiang

et al. 2015

J Mater Sci: Mater Electron

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In this work, TiO 2 -based varistor ceramics doped with Nb 2 O 5 , SiO 2 and Sm 2 O 3 are prepared by using conventional solid state synthesis. X-ray diffractometry, scanning electron microscopy, energy dispersive spectrometer and direct current electrical measurement are used to study phase composition, microstructure and nonlinear properties. It is found that the second phase emerges at grain boundary, having a great influence on nonlinear electrical behaviors. Breakdown voltage E 1mA initially decreases and then increases with increasing of Sm 2 O 3 content. The minimum of breakdown voltage E 1mA (9.3 V/mm) occurs at the composition of 99.0 %TiO 2 -0.5 %Nb 2 O 5 -0.3 %SiO 2 -0.2 %Sm 2 O 3 . Relative dielectric constant initially increases and then decreases. When the content of Sm 2 O 3 increases to 0.3 %, the varistor has ultrahigh dielectric constant, which is consistent with its narrowest grain-boundary barriers. The nonlinear coefficient increases from 2.51 to 4.13 with increase of Sm 2 O 3 from 0.0 to 0.4 %, and varistor of 98.8 %TiO 2 -0.5 %Nb 2 O 5 -0.3 %SiO 2 -0.4 %Sm 2 O 3 owns the highest grain-boundary barriers.

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Section: Resultssupporting

confidence: 83%

Influence of Sm2O3 on electrical performance of (Nb, Si)-doped TiO2-based varistor

Zhu

Xiang

et al. 2015

J Mater Sci: Mater Electron

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“…Yet only scarce of works were noticed on co-doping of rare earth ions in ZnO [22][23][24]. This led a way to prefer two almost similar ionic radii rare earth elements: Dysprosium (Dy) and Gadolinium (Gd) as dopants and an attempt is made to study the rare earth co-doping effect on ZnO nanoparticles in this present work.…”

Section: Introductionmentioning

confidence: 95%

“…At present, rare earth elements like Ce, Dy, La, Gd play the dopant role for several applications due to the electronic transitions occurring within 4f energy shells which forms trapped or defect state in the host material. Numerous works were done over mono doping of rare earth ions doped ZnO nanoparticles [16][17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Luminescence from Zn interstitials due to combustion derived complex of Dy and Gd activated ZnO nanopowders

Kalaiezhily

Asvini

Saravanan

et al. 2018

J Mater Sci: Mater Electron

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ZnO is an II-VI compound semiconductor possessing wide, direct bandgap (3.37 eV) and high excitonic binding energy (60 meV) even at room temperature. High crystalline ZnO nanostructures show distinctive characteristics in light emission, particularly in lasing applications. Here, in this work, rare earth doping in ZnO was carried out to enhance its photoluminescence property. Pure, 2 mol% Dy doped, 2 mol% Gd doped and 1 mol% Dy and Gd co-doped ZnO nanoparticles were synthesized via easy combustion technique. The synthesized nanoparticles were characterized by X-ray diffraction, Fourier Transform Infra Red Spectroscope, Field Emission Scanning Electron Microscope, High Resolution Transmission Electron Microscope, Diffuse Reflectance Spectroscope and Photoluminescence. Enhancement of Photoluminescence in 1 mol% Dy and Gd co-doped ZnO nanoparticles is observed.

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“…MgO promoted the development of the temperature coefficient of resistance in the positive direction [12], and TiO 2 was more friendly to the stability of resistivity [13]. Besides, the properties of ZnO linear resistance ceramics were improved by doping some rare earth oxides (La 2 O 3 [14], Y 2 O 3 [15], Sm 2 O 3 [16]). Based on the characteristics of ZnO linear resistance materials, the Fermi energy level at the grain boundary is smaller than that at the grain.…”

Section: Introductionmentioning

confidence: 99%

Effects of Ta₂O₅ on the microstructure and electrical properties of ZnO linear resistance ceramics

Zhuo

Huang

Zhao

et al. 2022

Mater. Res. Express

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ZnO-Al2O3-MgO-TiO2-SiO2-Ta2O5 (ZnO-based) linear resistance ceramics with doping different molar percentages of Ta2O5 were prepared by a conventional ceramics method. Effects of Ta2O5 additives on the phase composition, microstructures, and electrical properties of ZnO-based linear resistive ceramics were investigated. The results show that doping Ta2O5 can refine the grains of the main crystalline phase ZnO and the secondary crystalline phase ZnAl2O4 in terms of microstructure, and also can reduce the grain boundary barrier and optimize the I-V characteristics in terms of electrical properties. In addition, the doping of Ta2O5 can improve the stability of the resistivity , and the impedance frequency indicates that the doping of Ta2O5 makes the sample suitable for high-frequency electric fields. The resistivity of the sample doped with 0.2 mol% Ta2O5 is 56.2 Ω·cm, and this sample has the best grain boundary barrier height, nonlinear coefficient and temperature coefficient of resistance of 0.054 eV, 1.04 and -3.48×10-3 / ℃，respectively.

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Microstructure and electrical properties of rare-earth oxides doped ZnO-based linear resistance ceramics

Cited by 17 publications

References 17 publications

Influence of Sm2O3 on electrical performance of (Nb, Si)-doped TiO2-based varistor

Influence of Sm2O3 on electrical performance of (Nb, Si)-doped TiO2-based varistor

Luminescence from Zn interstitials due to combustion derived complex of Dy and Gd activated ZnO nanopowders

Effects of Ta₂O₅ on the microstructure and electrical properties of ZnO linear resistance ceramics

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Microstructure and electrical properties of rare-earth oxides doped ZnO-based linear resistance ceramics

Cited by 17 publications

References 17 publications

Influence of Sm2O3 on electrical performance of (Nb, Si)-doped TiO2-based varistor

Influence of Sm2O3 on electrical performance of (Nb, Si)-doped TiO2-based varistor

Luminescence from Zn interstitials due to combustion derived complex of Dy and Gd activated ZnO nanopowders

Effects of Ta2O5 on the microstructure and electrical properties of ZnO linear resistance ceramics

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Effects of Ta₂O₅ on the microstructure and electrical properties of ZnO linear resistance ceramics