Microstructure and electrical properties of lanthanum nickel oxide thin films deposited by metallo-organic decomposition method

Microstructure and electrical properties of La0.7Sr0.3MnO3 thin films deposited by metallo-organic decomposition method

“…However, the change in the resistivity is very small when the film is thicker than 600 nm. Similar trends of the resistivity versus thickness curve were also found for LaNiO 3 films fabricated by the MOD method on SiO 2 /Si substrates in our previous study [20]. This phenomenon may be attributed to the fact that the restraint on the films from the substrate decreases with increasing thickness of the films.…”

Effects of LaNiO3 buffer layer on the structures and properties of La0.7Sr0.3MnO3 thin films

“…However, the use of (10 0)-oriented LaNiO 3 (LNO) as a single buffer layer has not been reported until now. LNO is a perovskite-type metallic oxide with a pseudocubic lattice parameter of 0.384 nm, which matches well with that of LSMO films, and its resistivity at room temperature is about 10 À6 O m [20][21][22]. Therefore, the LNO film can function not only as a bottom electrode but also as a template layer in the control of the crystalline structure and preferred orientation of the LSMO films.…”

“…As for the LL700 and LL800, the diffraction peaks of the LSMO films are similar. However, the peak density of the LNO in the LL700 is higher than that of the LL800, which can be attributed to the part decomposition of the LaNiO 3 buffer layer at 800 1C [20][21][22]. Moreover, these results reveal that the LaNiO 3 buffer layer is beneficial for the crystallization of the LSMO films, which can be attributed to the better lattice mismatch between the LSMO and the LaNiO 3 than that of between the LSMO and the Si.…”

Microstructure and electrical properties of the conductive Pt–LaNiO3 composite films deposited with co-sputtering

“…Perovskite metallic oxides, such as La 0.5 Sr 0.5 CoO 3 , LaNiO 3 (LNO), and SrRuO 3 , have recently attracted much more attention due to their own unique physical properties and their potential to be used as bottom electrodes in the fabrication of ferroelectric memories and integrated ferroelectric microelectro-mechanical systems (MEMS) devices with silicon semiconductor technology [1,2]. Among them, LNO thin films have a pseudocubic structure and moderate lattice parameter (3.84 Å ), resulting in a good lattice match with ferroelectric materials [3,4].…”

“…Although Pt is also widely used as electrodes for its perfect conductivity and chemical inertness even in high temperatures, there still remain many limitations, e.g. ferroelectric films had been found easily fatigue-degraded and further more it was difficult to grow highly (1 0 0)-oriented films directly on the Pt-coated Si substrate [2,8]. Therefore, it would be of great scientific interest and technological importance to study what would happen and the consequent change of structural as well as physical properties if metal Pt is introduced into ceramic LaNiO 3 .…”