Microstructure and interfaces of HfO2 thin films grown on silicon substrates

He, Jiaqing; Teren, Andrew R.; Jia, C. L.; Ehrhart, P.; Urban, K.; Waser, Rainer; Wang, R.H

doi:10.1016/j.jcrysgro.2003.10.026

Cited by 25 publications

(6 citation statements)

References 26 publications

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“…We know from our XRD results (figure 4) that its pre-annealing condition, 3 h at 550 • C in UHV, is sufficient for HZO crystallization prior to the anneal in Se flux. It can be seen that the amorphous HZO (blue spectra) is more susceptible to Se incorporation, agreeing with reports of more open diffusion paths and higher diffusivities in analogous amorphous SiO 2 compared to crystalline silica phases [56][57][58][59].…”

Section: Impact Of the Mbe Growth Conditionssupporting

confidence: 89%

WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO

Sales¹,

Fields²,

Jaszewski³

et al. 2021

2D Mater.

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Direct integration of transition metal dichalcogenides on a ferroelectric such as hafnium zirconium oxide (HZO) using an industrially scalable technique is important for realizing various ferroelectric-based device architectures. The interface formed due to the processing conditions during direct deposition is the focus of the current study. In this work, molecular beam epitaxy (MBE) is used to directly deposit WSe 2 on HZO substrates, and the effects of the MBE growth conditions, specifically high temperature and a high Se flux, are examined. Anneals of HZO under a Se flux, which serve to replicate the conditions during actual WSe 2 deposition, result in the crystallization of amorphous as-deposited HZO substrates and incorporation of Se into the HZO. The crystallinity and composition of the HZO substrates affect the degree of Se incorporation. Some of the Se found in the HZO is an adsorbed layer that can be thermally desorbed, but it also has a chemisorbed component fully incorporated within the HZO lattice. Measurement of the electrical properties of the HZO films did not provide evidence that the incorporated Se was detrimental to the functionality of the HZO as a ferroelectric layer.

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Section: Impact Of the Mbe Growth Conditionssupporting

confidence: 89%

WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO

Sales¹,

Fields²,

Jaszewski³

et al. 2021

2D Mater.

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show abstract

“…Thus, at low temperatures (<1000 • C), the equilibrium phase is the monoclinic. However, under some special conditions, such as those that exist during film deposition, polymorphs can exist at much lower temperatures [22]. The crystalline phase that results depends on the deposition technique and the annealing temperature.…”

Section: Structural and Morphological Propertiesmentioning

confidence: 99%

Effect of annealing on pulsed laser deposited zirconium oxide thin films

Al-Kuhaili

Durrani

2011

Journal of Alloys and Compounds

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“…Structural investigation by transmission electron microscopy (TEM) for thin films deposited on silicon wafers is required in an increasing number of applications. Plan-view TEM and especially cross-section TEM (XTEM) observations are needed to obtain useful results, as shown, for example, in He et al (2004) and Zaharescu et al (2008) for the case of HfO 2 thin films deposited on silicon wafers.…”

Section: Introductionmentioning

confidence: 99%

Fast and Simple Specimen Preparation for TEM Studies of Oxide Films Deposited on Silicon Wafers

Teodorescu

Blanchin

2009

Microsc Microanal

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We present a fast and simple method to prepare specimens for transmission electron microscopy studies of oxide thin films deposited on silicon substrates. The method consists of scratching the film surface using a pointed diamond tip, in a special manner. Small and thin fragments are then detached from the film and its substrate. Depending on the scratching direction, the fragments can be used for plan-view or cross-section imaging. High-resolution images can be also obtained from thin edges of the film fragments. The method is demonstrated in the case of HfO2 sol-gel films deposited on [100] Si wafer substrates.

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Microstructure and interfaces of HfO2 thin films grown on silicon substrates

Cited by 25 publications

References 26 publications

WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO

WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO

Effect of annealing on pulsed laser deposited zirconium oxide thin films

Fast and Simple Specimen Preparation for TEM Studies of Oxide Films Deposited on Silicon Wafers

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Microstructure and interfaces of HfO2 thin films grown on silicon substrates

Cited by 25 publications

References 26 publications

WSe2 growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe2 growth conditions on the ferroelectric properties of HZO

WSe2 growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe2 growth conditions on the ferroelectric properties of HZO

Effect of annealing on pulsed laser deposited zirconium oxide thin films

Fast and Simple Specimen Preparation for TEM Studies of Oxide Films Deposited on Silicon Wafers

Contact Info

Product

Resources

About

WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO

WSe₂ growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe₂ growth conditions on the ferroelectric properties of HZO