Microstructure and Magnetic Properties of bcc-Co Films Epitaxially Grown on GaAs(110)<sub>B3</sub>Single-Crystal Substrates

Ohtake, Mitsuru; Yabuhara, Osamu; Higuchi, Jumpei; Futamoto, Masaaki

doi:10.1143/apex.4.013006

Cited by 7 publications

(6 citation statements)

References 9 publications

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“…Furthermore, sputtering is more suitable than MBE for mass-production applications. Recently, we succeeded in the formations of Co and Ni films with bcc structure on GaAs(100) [7] and GaAs(110) [8] substrates by sputtering. The stability of bcc structure and phase transformation process were investigated for the films deposited on GaAs(100) substrates [7].…”

Section: Introductionmentioning

confidence: 99%

bcc Phase Formation in Fe, Co, and Ni Thin Films Deposited on GaAs(110) Substrates

et al. 2015

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Fe, Co, and Ni thin films are deposited on GaAs(110) substrates at room temperature using a radio frequency magnetron sputtering system. The film thickness is varied in a range between 1 and 40 nm. The growth behavior and the detailed resulting film structure are investigated by reflection high-energy electron diffraction and pole-figure X-ray diffraction. The bcc single-crystals nucleate on the substrates for all the film materials, though the bcc structure is metastable for Co and Ni materials. The metastable structure is stabilized through heteroepitaxial growth. The crystallographic orientation relationship is bcc(110)[001]||GaAs(110)[001].With increasing the thickness beyond 2 nm, the bcc-Co and bcc-Ni crystals start to transform into fcc structure through atomic displacements parallel to the slide planes of bcc(101), bcc(011), bcc(011), and bcc(101) that are 60°inclined from the surface. The Co and Ni films thicker than 2 nm involve fcc crystals. On the contrary, Fe films possess bcc structure for all the thicknesses.Index Terms-3d ferromagnetic transition metal, epitaxial single-crystal thin film, metastable bcc structure, phase transformation.

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Section: Introductionmentioning

confidence: 99%

bcc Phase Formation in Fe, Co, and Ni Thin Films Deposited on GaAs(110) Substrates

et al. 2015

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“…A2 phase is stable for Fe, whereas that is metastable for Co and Ni. Co [4][5][6][7][8][9][10][11] and Ni 12) films with A2 structure have been prepared through hetero-epitaxial growth on GaAs single-crystal substrates around room temperature (RT). Most of the metastable A2 crystals are reported to transform into more stable A3 or A1 structure with increasing the thickness.…”

Section: Introductionmentioning

confidence: 99%

Structural Characterization of Co Thin Film with bcc-Based A2 Structure Epitaxially Grown on GaAs(100) Single-Crystal Substrate

et al. 2014

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Co films are prepared on GaAs(100) single-crystal substrates at temperatures ranging between room temperature and 600 °C by varying the thickness from 1 to 40 nm. The growth behavior and the detailed structure are investigated by reflection high-energy electron diffraction and X-ray diffraction. (100)-oriented Co single-crystals with bcc-based A2 structure are formed in early stages of film growth at temperatures lower than 200 °C, where the bcc-based A2 structure is stabilized through hetero-epitaxial growth. With increasing the thickness up to 2 nm, the A2 structure starts to transform into more stable hcp-based A3 structure through atomic displacements from A2{110} to A3(0001) close-packed plane. The films thicker than 2 nm thus involve six types of A3 crystal. As the substrate temperature increases up to 400 °C, large amounts of Ga and As atoms diffuse from the substrate into the film, and Co-Ga and Co-Ga-As alloy crystals with bcc-based B2 and L21 structures are formed.

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“…The epitaxial orientation relationship of Cu(001)[100] || Pd(001)[100] || MgO(001)[100] was confirmed by RHEED. The details of Cu layer formation are reported in our previous paper 6) . Ni films were deposited on the Cu(001) layers by varying the thickness in a range from 40 to 500 nm.…”

Section: Methodsmentioning

confidence: 99%

Magnetostriction Behavior of Ni(001) Single-Crystal Films with Different Thicknesses under In-plane Rotating Magnetic Fields

et al. 2013

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Ni single-crystal films of (001) orientation are prepared on Cu(001) buffer layers hetero-epitaxially grown on MgO(001) single-crystal substrates by varying the thickness in a range between 40 and 500 nm. The influence of film thickness on the magnetostriction behavior under in-plane rotating magnetic fields is investigated. A 40-nm-thick film shows a four-fold symmetry in in-plane magnetic anisotropy. The magnetic anisotropy decreases with increasing the thickness and a 500-nm-thick film shows an almost isotropic magnetic property. A triangular output waveform of magnetostriction is observed when the 40-nm-thick film is measured under low magnetic fields. The triangular behavior is related with the motion of magnetic domain walls in the magnetically unsaturated film under rotating magnetic field. With increasing the magnetic field, the film approaches to magnetic saturation and the waveform shifts to a sinusoidal shape. On the contrary, the 500-nm-thick film shows sinusoidal waveforms under low rotating fields. The magnetostriction behavior of Ni(001) single-crystal film is delicately affected by the magnetization structure which depends on the effective in-plane magnetic anisotropy.

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Microstructure and Magnetic Properties of bcc-Co Films Epitaxially Grown on GaAs(110)_B3Single-Crystal Substrates

Cited by 7 publications

References 9 publications

bcc Phase Formation in Fe, Co, and Ni Thin Films Deposited on GaAs(110) Substrates

bcc Phase Formation in Fe, Co, and Ni Thin Films Deposited on GaAs(110) Substrates

Structural Characterization of Co Thin Film with bcc-Based A2 Structure Epitaxially Grown on GaAs(100) Single-Crystal Substrate

Magnetostriction Behavior of Ni(001) Single-Crystal Films with Different Thicknesses under In-plane Rotating Magnetic Fields

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Microstructure and Magnetic Properties of bcc-Co Films Epitaxially Grown on GaAs(110)B3Single-Crystal Substrates

Cited by 7 publications

References 9 publications

bcc Phase Formation in Fe, Co, and Ni Thin Films Deposited on GaAs(110) Substrates

bcc Phase Formation in Fe, Co, and Ni Thin Films Deposited on GaAs(110) Substrates

Structural Characterization of Co Thin Film with bcc-Based A2 Structure Epitaxially Grown on GaAs(100) Single-Crystal Substrate

Magnetostriction Behavior of Ni(001) Single-Crystal Films with Different Thicknesses under In-plane Rotating Magnetic Fields

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Microstructure and Magnetic Properties of bcc-Co Films Epitaxially Grown on GaAs(110)_B3Single-Crystal Substrates