“…3, the Stokes shift increases and no change of band gap energy can be observed in Fig. 4, indicating the gradual decrease in carrier concentration as the continually introducing of H. A reasonable explanation for this is that the introducing of H reduced the solubility of the substitutional Al, even though all the films were deposited from the precursor solutions with constant Al:Zn atomic ratio of up to 4:100 [14,15]. Therefore, the influence of introduced H on Al concentration should be directly responsible for the decrease in carrier concentration.…”