The evolution behavior of structures and photoluminescence of K-doped ZnO thin films under different annealing temperatures

Red shift of the band-edge photoluminescence emission and effects of annealing and capping agent on structural and optical properties of ZnO nanoparticles

“…In the present case, the strong UV emission for S2#600 sample in compared to the other samples might have appeared due to the improved crystallinity of the samples prepared by annealing the as-synthesized sample at such a higher temperature of 600 °C. Earlier similar observation has also been reported by Xu et al [34] in annealed K doped ZnO thin films. The origin of defect related visible PL emission spectra in ZnO nanostructures has been studied for a long time and different origins for visible PL emissions have been proposed [57][58][59][60][61].…”

“…9(d) that the intensity of UV PL emission peak for S2#600 is higher than that of the other samples. It is believed, in general, that the intensity of UV emission in ZnO NPs is strongly dependent on the density of free excitons which are closely connected with the crystallinity of the sample [34], and so enhancement in UV PL emission intensity may take place in the sample with improved crystallinity. In the present case, the strong UV emission for S2#600 sample in compared to the other samples might have appeared due to the improved crystallinity of the samples prepared by annealing the as-synthesized sample at such a higher temperature of 600 °C.…”

“…It has also been reported that surfactant plays an important role as growth inhibitor even at higher temperatures and may further increase the photostability of photocatalytic decomposition [25]. Along-with the use of capping molecules and surfactants during synthesis, annealing treatment at various temperatures is another parameter for obtaining ZnO NPs with 3 interesting morphologies and shapes along-with significant changes in the optical and electronic properties [29][30][31][32][33][34][35][36][37][38][39].…”

Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

“…It has been suggested that p-type doping in ZnO can be achieved through substituting either group I elements, such as Na [11], K [12] or Li [13] with Zn or group V elements, such as N [10], P [14], As [5] or Sb [3] for oxygen. Furthermore, Li-N [9] and Al-N [2] co-doped ZnO films have also been studied to produce p-type ZnO.…”

Fabrication and properties of p-type K doped Zn1−Mg O thin film

“…Recent investigations have suggested that doping Na into ZnO is a promising p-type conversion method [16,17]. Little attention has been paid to another important element K in group-I and its related alloys [18][19][20][21][22], which behaves analogously to Na. In previous study, codoping methods have been tried to realize ZnO p-type conversion by using Al-N, In-N, Na-H, Mg-Li, Li-N, etc., and the goal is to facility the solubility of acceptor and improve the p-type stability [23][24][25][26][27].…”