Microstructure and Properties of Well-Ordered Multiferroic Pb(Zr,Ti)O3/CoFe2O4 Nanocomposites

Gao, Xingsen; Rodriguez, Brian J.; Liu, Lifeng; Birajdar, Balaji; Pantel, Daniel; Ziese, M.; Alexe, Marin; Hesse, D.

doi:10.1021/nn9012934

Cited by 90 publications

(73 citation statements)

References 29 publications

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“…In comparison with layered composite fi lms where there is clamping from stiff substrates, the 1-3 type vertical heterostructure consisting of a magnetic spinel nanopillars epitaxially embedded in the ferroelectric fi lm matrix could exhibit large direct ME response, [164][165][166][167] which is attributed to (1) a reduced clamping effect by the substrate in the vertical architecture, and (2) effi cient strain coupling resulting from a larger interfacial area and intrinsically heteroepitaxial in three dimensions. However, the direct ME response was not easy to be measured in the 1-3 type vertical heterostructures because of possible leakage problem resulting from low resistance of the magnetic pillars penetrating through the fi lm matrix.…”

Section: Approaches For Enhancing Direct Me Responsementioning

confidence: 99%

Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin Films

Ma¹,

Hu²,

Li³

et al. 2011

Advanced Materials

1,731

915

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Multiferroic magnetoelectric composite systems such as ferromagnetic-ferroelectric heterostructures have recently attracted an ever-increasing interest and provoked a great number of research activities, driven by profound physics from coupling between ferroelectric and magnetic orders, as well as potential applications in novel multifunctional devices, such as sensors, transducers, memories, and spintronics. In this Review, we try to summarize what remarkable progress in multiferroic magnetoelectric composite systems has been achieved in most recent few years, with emphasis on thin films; and to describe unsolved issues and new device applications which can be controlled both electrically and magnetically.

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Section: Approaches For Enhancing Direct Me Responsementioning

confidence: 99%

Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin Films

Ma¹,

Hu²,

Li³

et al. 2011

Advanced Materials

1,731

915

View full text Add to dashboard Cite

show abstract

“…Currently there exist two ways to control magnetization by electric field. One is to explore the heterostructures with ferroelectric and ferromagnetic constituents12131415. In these structures an applied electric field can influence the magnetic properties of ferromagnetic compounds by either inducing a strain in ferroelectric layers, which can be transferred into ferromagnetic compounds through the magnetostrictive coupling1617, or switching the ferroelectric polarization, which affects the interfacial magnetism through interfacial magnetoelectric (ME) effect121819.…”

mentioning

confidence: 99%

Picosecond electric field pulse induced coherent magnetic switching in MgO/FePt/Pt(001)-based tunnel junctions: a multiscale study

Zhu

Xiao

Liu

et al. 2014

Sci Rep

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Combined methods of first-principles calculations and Landau-Lifshitz-Gilbert (LLG) macrospin simulations are performed to investigate the coherent magnetization switching in the MgO/FePt/Pt(001)-based magnetic tunnel junctions triggered by short pulses of electric field through the control of magnetic anisotropy energy (MAE) electrically. First-principles calculations indicate that the MAE of MgO/FePt/Pt(001) film varies linearly with the change of the electric field, whereas the LLG simulations show that the change in MAE by electric field pulses could induce the in-plane magnetization reversal of the free layer by tuning the pulse parameters. We find that there exist a critical pulse width τmin to switch the in-plane magnetization, and this τmin deceases with the increasing pulse amplitude E0. Besides, the magnetization orientation cannot be switched when the pulse width exceeds a critical value τmax, and τmax increases asymptotically with E0. In addition, there exist some irregular switching areas at short pulse width due to the high precessional frequency under small initial angle. Finally, a successive magnetization switching can be achieved by a series of electric field pulses.

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“…Normally, the platinum and the iridium have their work functions of around 5.65 and 5.27 eV, respectively, which produces an overall theoretical built-in voltage of 0.38 eV. This breaks the equivalence of two polarization states and provides a strong tendency to alight the domains to a preferred orientation [35–37]. Additionally, the surface charges stored at the interface between PZT and Pt electrode may contribute to the observed asymmetric polarization states [38].…”

Section: Resultsmentioning

confidence: 99%

Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching

et al. 2016

Self Cite

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In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 1010 cm−2) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.

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Microstructure and Properties of Well-Ordered Multiferroic Pb(Zr,Ti)O₃/CoFe₂O₄ Nanocomposites

Cited by 90 publications

References 29 publications

Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin Films

Recent Progress in Multiferroic Magnetoelectric Composites: from Bulk to Thin Films

Picosecond electric field pulse induced coherent magnetic switching in MgO/FePt/Pt(001)-based tunnel junctions: a multiscale study

Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching

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