The growth of (RE)1Βa2Cu3O7-δ (RE: Y, Nd) fflms on NdGaO3 and SrΤiO3 substrates by ion-beam and dc-/rf-magnetron sputter deposition is discussed in the framework of growth kinetics, oxygen exchange, epitaxial relations, substrate crystal orientation, in-plane coherence, vicinal substrate cuts, overgrowth on steps, superconductor/insulator combinations, and patterning by ion-beam etching. Tle process conditions for ion-beam and magnetron sputter deposition are briefly outlined.