Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

Guo, Xiaojun; Wang, Yutian; Zhao, Degang; Jiang, Desheng; Zhu, Jianjun; Liu, Zongshun; Wang, Hui; Zhang, Shuming; Qiu, Yong-Xin; Xu, Ke; Yang, Hui

doi:10.1088/1674-1056/19/7/076804

Cited by 5 publications

(1 citation statement)

References 27 publications

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“…For accurate crystallite size analysis, X-ray line broadening effects (crystalline size, instrumental and strain effects [44]) should be taken into account. The instrumental broadening ðβ inst Þ is extracted from observed broadening ðβ obs Þ with following equation [45]:…”

Section: Microstructural Investigation Of Ndto Thin Filmsmentioning

confidence: 99%

Evaluation of an Nd doping effect on characteristic properties of tin oxide

Turgut

Sönmez

Duman

2015

Materials Science in Semiconductor Processing

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Section: Microstructural Investigation Of Ndto Thin Filmsmentioning

confidence: 99%

Evaluation of an Nd doping effect on characteristic properties of tin oxide

Turgut

Sönmez

Duman

2015

Materials Science in Semiconductor Processing

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X-ray probe of GaN thin films grown on InGaN compliant substrates

Liu

et al. 2013

Applied Physics Letters

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GaN thin films grown on InGaN compliant substrates were characterized by several X-ray technologies: X-ray reciprocal space mapping (RSM), grazing incidence X-ray diffraction (GIXRD), and X-ray photoemission spectrum (XPS). Narrow Lorentz broadening and stress free state were observed for GaN grown on InGaN compliant substrate, while mosaic structure and large tensile stress were observed at the presence of residual indium atoms. RSM disclosed the mosaicity, and the GIXRD was conducted to investigate the depth dependences of crystal quality and strain states. XPS depth profile of indium contents indicated that residual indium atoms deteriorated the crystal quality of GaN not only by producing lattice mismatch at the interface of InGaN and GaN but also by diffusing into GaN overlayers. Accordingly, two solutions were proposed to improve the efficiency of self-patterned lateral epitaxial overgrowth method. This research goes a further step in resolving the urgent substrate problem in GaN fabrication.

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Improvement of doping efficiency in Mg-Al_0.14Ga_0.86N/GaN superlattices with AlN interlayer by suppressing donor-like defects

Liu¹,

Liu²,

Wang³

et al. 2012

Chinese Phys. B

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We investigate the mechanism for the improvement of p-type doping efficiency in Mg-Al 0.14 Ga 0.86 N/GaN superlattices (SLs). It is shown that the hole concentration of SLs increases by nearly an order of magnitude, from 1.1×10 17 to 9.3×10 17 cm −3 , when an AlN interlayer is inserted to modulate the strains. Schrödinger-Poisson self-consistent calculations suggest that such an increase could be attributed to the reduction of donor-like defects caused by the strain modulation induced by the AlN interlayer. Additionally, the donor-acceptor pair emission exhibits a remarkable decrease in intensity of the cathodoluminescence spectrum for SLs with an AlN interlayer. This supports the theoretical calculations and indicates that the strain modulation of SLs could be beneficial to the donor-like defect suppression as well as the p-type doping efficiency improvement.

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Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

Cited by 5 publications

References 27 publications

Evaluation of an Nd doping effect on characteristic properties of tin oxide

Evaluation of an Nd doping effect on characteristic properties of tin oxide

X-ray probe of GaN thin films grown on InGaN compliant substrates

Improvement of doping efficiency in Mg-Al_0.14Ga_0.86N/GaN superlattices with AlN interlayer by suppressing donor-like defects

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Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

Cited by 5 publications

References 27 publications

Evaluation of an Nd doping effect on characteristic properties of tin oxide

Evaluation of an Nd doping effect on characteristic properties of tin oxide

X-ray probe of GaN thin films grown on InGaN compliant substrates

Improvement of doping efficiency in Mg-Al0.14Ga0.86N/GaN superlattices with AlN interlayer by suppressing donor-like defects

Contact Info

Product

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Improvement of doping efficiency in Mg-Al_0.14Ga_0.86N/GaN superlattices with AlN interlayer by suppressing donor-like defects