2012
DOI: 10.1002/sia.4898
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Microstructure and surface roughness of graphite‐like carbon films deposited on silicon substrate by molecular dynamic simulation

Abstract: a Molecular dynamics simulations are performed on the atomic origin of the growth process of graphite-like carbon film on silicon substrate. The microstructure, mass density, and internal stress of as-deposited films are investigated systematically. A strong energy dependence of microstructure and stress is revealed by varying the impact energy of the incident atoms (in the range 1-120 eV). As the impact energy is increased, the film internal stress converts from tensile stress to compressive stress, which is … Show more

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Cited by 19 publications
(10 citation statements)
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“…Microstructures of the resulting films clearly show that the population of sp 3 -hybridized carbon increases with increasing incident energy, while the porosity decreases as the energetic carbon atoms hit the surface with great force, making it dense and smooth overall ( Table 1 ). This result is in accord with the previous studies of Huang et al , but they focused on high incident energies of several tens-of-eV [ 28 , 29 ].…”
Section: Resultssupporting
confidence: 93%
See 1 more Smart Citation
“…Microstructures of the resulting films clearly show that the population of sp 3 -hybridized carbon increases with increasing incident energy, while the porosity decreases as the energetic carbon atoms hit the surface with great force, making it dense and smooth overall ( Table 1 ). This result is in accord with the previous studies of Huang et al , but they focused on high incident energies of several tens-of-eV [ 28 , 29 ].…”
Section: Resultssupporting
confidence: 93%
“…We deposit single atomic carbons on a bulky silicon surface to generate computational model structures of carbon coating. Incident energy is used as the controlling parameter, and we focus only on low incident energy because GLC is grown under low incident energy [ 28 ]. The structure is characterized in terms of bonding populations and porosity, followed by the calculation of electronic structure.…”
Section: Introductionmentioning
confidence: 99%
“…Typical values of r 1 and r 2 for C-C bonds are 1.45 and 2.55 Å, whereas for C-Si bonds r 1 and r 2 are equal to 1.85 and 2.85 Å, respectively. In the present study, the cutoff distance for C-C bonds was set at 1.9 Å, while that for C-Si bonds was set at 2.0 Å, which is close to the 2.1 Å cutoff distance used in previous works 33,34 . Because carbon atoms can form bonds with both carbon and silicon atoms, the sp 2 and sp 3 contents reported here include both C-C and C-Si bonds.…”
Section: Resultsmentioning
confidence: 98%
“…In both sample series Si 4+ (Si2p 3/2 103.6 eV; 104.2 eV Si2p 1/2 ), Si 3+ (Si2p 3/2 103.6 eV; 104.2 eV Si2p 1/2 ) and in one case Si + (Si2p 3/2 103.6 eV; 104.2 eV Si2p 1/2 ) was detected [40,41]. Si 3+ appeared in higher concentration in the sample series (1) TiO 2 -SiO 2 -Ag, while Si + was evident only in (2) TiO 2 -SiO 2 -Ag [42]. …”
Section: Resultsmentioning
confidence: 99%