Microstructure characterisation of ALD-grown epitaxial SnO2 thin films

Lu, Jun; Sundqvist, Jonas; Ottosson, Mikael; Tarre, Aivar; Rosental, A.; Aarik, Jaan; Hårsta, Anders

doi:10.1016/j.jcrysgro.2003.08.042

Cited by 71 publications

(43 citation statements)

References 23 publications

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“…This type of twinning was recently also confirmed by transmission electron microscopy (TEM) studies of SnO 2 films grown by ALD on the same kind of substrate. [28] The orientation T3 in Figure 8b consists of two sets of reflections, one obtained by tilting about 45 in the [101] direction, and the other by tilting about 45 in the [101] direction. Since the tilt angle is the same as for the T2 orientation, it is likely that the T3 orientation also belongs to {011} twinning.…”

Section: Epitaxial Relationshipsmentioning

confidence: 99%

CVD of Epitaxial S_nO₂ Films by the SnI₄/O₂ Precursor Combination

Sundqvist

Ottosson

Hårsta³

2004

Chemical Vapor Deposition

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Thin films of SnO 2 have been successfully deposited by CVD using the SnI 4 /O 2 precursor combination. Depositions were carried out in the temperature range 350±700 C on a-Al 2 O 3 (012) substrates. The growth kinetics and conditions for epitaxial growth were investigated. From 350 C to 475 C, the growth rate was controlled by surface kinetics and increased exponentially from 5 nm h ±1 to 735 nm h ±1. Two different surface reactions are proposed, one at low temperatures involving SnI 4 , and one at high temperatures involving SnI 2 . Above 475 C the growth rate was controlled by mass transport of the tin-containing species. The epitaxial relationships were established to the in-plane orientation relationships, [010]

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Section: Epitaxial Relationshipsmentioning

confidence: 99%

CVD of Epitaxial S_nO₂ Films by the SnI₄/O₂ Precursor Combination

Sundqvist

Ottosson

Hårsta³

2004

Chemical Vapor Deposition

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“…Several fabrication methods have been employed to grow the epitaxial (single crystal-like) SnO 2 thin films, which include sputtering [11][12][13][14][15][16], chemical vapor deposition (CVD) [17][18][19][20][21][22][23][24], physical vapor deposition (PVD) [25], pulsed laser deposition (PLD) [26][27][28][29][30], an excimer laser-assisted metal organic deposition (ELAMOD) [31], molecular beam epitaxy [32,33], and atomic layer deposition (ALD) [9,[34][35][36][37][38]. The commonly used substrates are sapphire (Al 2 O 3 ) [(0 0 0 1) (c-cut) and (1 1 0 2) (r-cut)] and TiO 2 [(0 0 1), (1 1 0), (1 0 0), and (1 1 1)], and in-and out-of-plane epitaxial relationships between SnO 2 films and substrates have been reported.…”

Section: Introductionmentioning

confidence: 99%

Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD

Kim

Kwon

Kim

et al. 2011

Journal of Crystal Growth

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“…A highly sensitive surface also makes SnO 2 an important material for sensor technology [6][7][8]. Currently, the methods of reactive radio frequency magnetron sputtering [9], sol-gel synthesis, chemical vapor deposition (CVD) [10,11] and atomic layer deposition (ALD) [11][12][13] are commonly used to produce SnO 2 thin films for various studies. Unfortunately, extensive investigations of SnO 2 fundamental material properties are currently limited by poorly controlled impurity levels in the films.…”

Section: Introductionmentioning

confidence: 99%