Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)
DOI: 10.1109/iitc.2000.854334
|View full text |Cite
|
Sign up to set email alerts
|

Microstructure characterization of metal interconnects and barrier layers: status and future

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Publication Types

Select...
3
2
1

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(1 citation statement)
references
References 7 publications
0
1
0
Order By: Relevance
“…The EM lifetime depends on a variation of material properties at the microscopic and atomistic levels. Microscopic properties are grain boundaries and grains with their crystal orientation [2]. Atomistic properties are configurations of atoms at the grain boundaries, at the interfaces to the surrounding layers, and at the cross-section between grain boundaries and interfaces.…”
Section: Introductionmentioning
confidence: 99%
“…The EM lifetime depends on a variation of material properties at the microscopic and atomistic levels. Microscopic properties are grain boundaries and grains with their crystal orientation [2]. Atomistic properties are configurations of atoms at the grain boundaries, at the interfaces to the surrounding layers, and at the cross-section between grain boundaries and interfaces.…”
Section: Introductionmentioning
confidence: 99%