Microstructure of epitaxial YBa2Cu3O7−δ thin films grown on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 substrates

Yu, Yi; Zhang, X.; Wang, J.W.; Zhao, Yongxiang

doi:10.1016/j.jcrysgro.2012.05.042

Cited by 3 publications

(1 citation statement)

References 17 publications

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“…Perovskite-type binary and ternary ferroelectric (FE) single crystals of (1 -x)Pb(Mg [17][18][19][20] as well as large ferroelectric-domain-switching-induced lattice strains, which can be reversibly, continuously, and quantitatively tuned by simply applying dc or ac electric fields to the FE crystals along the thickness direction. As of now, finely polished (001)-, (011)-, and (111)-cut PMN-xPT and PIN-xPMN-yPT single crystals have been used as substrates to grow a variety of thin films, such as R 1-x A x MnO 3 (R = La, Pr, A = Ca, Sr, Ba) [21][22][23][24][25][26][27][28][29], Co [30,31], BiFeO 3 [32], YBa 2 Cu 3 O 7 [33,34], BaTiO 3 :Yb/Er [35,36], AFe 2 O 4 (A = Co, Ni) [37,38], Fe 3 O 4 [39,40], and Bi 0.94 Pb 0.06 CuSeO [41], so that the lattice strain and the related properties of these films could be in situ modified. Virtually, using this unique method, the intrinsic lattice strain effects of any films grown on FE substrates can be studied without introducing extrinsic effects caused by the variation in oxygen content, thickness of the dead layer, defects, crystallinity, disorder, and so on.…”

Section: Introductionmentioning

confidence: 99%

Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain

Yan

Chen

et al. 2019

Phys. Rev. Applied

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Using perovskite-type charge-transfer oxide thin films of NdNiO3 (NNO) as a model system, we demonstrate that the effects of lattice strain on the electronic transport properties can be more comprehensively understood by growing NNO films on a number of (001)-, (011)-, and (111)-cut singlecrystal substrates with different lattice mismatches including the relaxor-based 0.31Pb(In1/2Nb1/ 2)O3-0.35Pb(Mg1/3Nb2/3)O3-0.34PbTiO3 (PIN-PMN-PT) and 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) ferroelectric (FE) single crystals. In addition to the static lattice strains from conventional substrates (e.g., SrTiO3, LaAlO3), we in situ impose in-plane compressive or tensile strains to NNO films using FE/ferroelastic domain switching of FE substrates. An unprecedented electric-field-induced large out-of-plane compressive strain (-0.53%) and in-plane tensile strain (+0.81%) are achieved in the 25-nm NNO film by switching the polarization direction of the PIN-PMN-PT substrate at T = 200 K. This value is approximately 7.4 to 45 times larger than those previously reported in FE substrate-based heterostructures. As a result of the induced large lattice strain, the resistivity of the NNO film is modulated up to 125%. Further, taking advantage of the linear piezoelectric strain, a quantitative relationship between the resistivity and the in-plane strain of the NNO film is established, with a gauge fact of (Δρ/ ρ)/δϵxx∼40.8. Moreover, using the domain-engineered FE/ferroelastic switching of PMN-PT substrates, multiple stable resistance states with good retention and endurance properties can be obtained at room temperature and the metal-to-insulator transition temperature (T MI) of NNO films can be modified by precisely controlling the electric-field-pulse sequence as a result of the nonvolatile remnant strain transferring from the PMN-PT to the NNO film. Our results demonstrate that the electric-field-tunable ferroelastic/piezoelectric strain approach can be utilized to gain deeper insight into the intrinsic strainproperty relationship of perovskite nickelate films and provide a simple and energy efficient way to construct multistate resistive memories.

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Section: Introductionmentioning

confidence: 99%

Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain

Yan

Chen

et al. 2019

Phys. Rev. Applied

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Designed 3D architectures of high-temperature superconductors

2013

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Dynamic variation of biaxial strain in optimally doped and underdoped YBa2Cu3O7−δ thin films

Pahlke

Trommler

Holzäpfel

et al. 2013

Journal of Applied Physics

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Continuous and reversible biaxial strain was applied to optimally doped and underdoped YBa2Cu3O7−δ (YBCO), using epitaxial thin films on (001)-oriented piezoelectric Pb(Mg1/3Nb2/3)0.72Ti0.28O3 substrates. Biaxial strain of up to 0.1% was induced into the YBCO ab-plane by applying an electric field to the substrate, leading to a continuous and reversible shift of the superconducting transition temperature, the normal state resistance and the upper critical field. The shift of the superconducting transition temperature was determined to about 0.75 K per 1% compressive biaxial strain for optimally doped YBCO, whereas a significant higher strain sensitivity of 4.20 K per 1% strain was found for underdoped YBCO. These values were compared to strain sensitivity data calculated out of available data from pressure experiments, showing a rather good agreement.

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Microstructure of epitaxial YBa2Cu3O7−δ thin films grown on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 substrates

Cited by 3 publications

References 17 publications

Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain

Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain

Designed 3D architectures of high-temperature superconductors

Dynamic variation of biaxial strain in optimally doped and underdoped YBa2Cu3O7−δ thin films

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