Microstructure of sputtered metal films grown in high- and low-pressure discharges

Kay, E.; Parmigiani, F.; Parrish, W.

doi:10.1116/1.575477

Cited by 49 publications

(11 citation statements)

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“…Much of the work on plasma deposition of metal-polymer nanocomposites has been pioneered by Kay et al [35][36][37][38] Up to now the most common approach is sputtering from a metal target and simultaneous plasma polymerization of organic precursors. This approach allows a large variety of metals and polymeric matrices to be combined.…”

Section: Plasma Polymerizationmentioning

confidence: 99%

Metal‐Polymer Nanocomposites for Functional Applications

et al. 2010

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Nanocomposites combine favorable features of the constituents on the nanoscale to obtain new functionalities. The present paper is concerned with the preparation of polymer‐based nanocomposites consisting of metal nanoparticles in a polymer matrix and the resulting functional properties. Emphasis is placed on vapor phase deposition which inter alia allows the incorporation of alloy clusters with well defined composition and tailored filling factor profiles. Examples discussed here include optical composites with tuned particle surface plasmon resonances for plasmonic applications, magnetic high frequency materials with cut‐off frequencies well above 1 GHz, sensors that are based on the dramatic change in the electronic properties near the percolation threshold, and antibacterial coatings which benefit from the large effective surface of nanoparticles and the increased chemical potential which both strongly enhance ion release.

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Section: Plasma Polymerizationmentioning

confidence: 99%

Metal‐Polymer Nanocomposites for Functional Applications

et al. 2010

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“…It is well known that low energy working gas ion bombardment during deposition of thin films has a significant influence on the structure and properties of the growing film, including degree and direction of orientation, grain size, the film density, and film stress. 7,8,28 Increased ionization of the sputtered vapor also gives improvement of the film quality, such as density, [29][30][31] FIG. 1.…”

Section: Introductionmentioning

confidence: 99%

High power impulse magnetron sputtering discharge

Guðmundsson¹,

Brenning²,

Lundin³

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

637

446

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The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

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“…Since the argon was removed and oxygen cannot Penning ionize Al, 17 this implies that the Penning process is not important in our case, as expected due to the low pressure. 18 In the following calculations, we thus assume that the main ionization mechanism is by electron impact.…”

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confidence: 99%

Molecular content of the deposition flux during reactive Ar∕O2 magnetron sputtering of Al

Andersson

Wallin

Münger

et al. 2006

Applied Physics Letters

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The deposition flux obtained during reactive radio frequency magnetron sputtering of an Al target in Ar∕O2 gas mixtures was studied by mass spectrometry. The results show significant amounts of molecular AlO+ (up to 10% of the Al+ flux) in the ionic flux incident onto the substrate. In the presence of ∼10−4Pa H2O additional OH+ and AlOH+ were detected, amounting to up to about 100% and 30% of the Al+ flux, respectively. Since the ions represent a small fraction of the total deposition flux, an estimation of the neutral content was also made. These calculations show that, due to the higher ionization probability of Al, the amount of neutral AlO in the deposition flux is of the order of, or even higher than, the amount of Al. These findings might be of great aid when explaining the alumina thin film growth process.

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Microstructure of sputtered metal films grown in high- and low-pressure discharges

Cited by 49 publications

References 0 publications

Metal‐Polymer Nanocomposites for Functional Applications

Metal‐Polymer Nanocomposites for Functional Applications

High power impulse magnetron sputtering discharge

Molecular content of the deposition flux during reactive Ar∕O2 magnetron sputtering of Al

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