2003
DOI: 10.1116/1.1636157
|View full text |Cite
|
Sign up to set email alerts
|

Microstructure of α-alumina thin films deposited at low temperatures on chromia template layers

Abstract: Radio frequency sputtering has been used to deposit α-alumina (α-Al2O3) thin films at substrate temperatures of 280–560 °C. The films are shown to be single phased and hard. Nanoindentation gives values of 306±31 and 27±3 GPa for elastic modulus and hardness, respectively, for a substrate temperature of 280 °C. Growth of the α phase was achieved by in situ predeposition of a chromia template layer. Chromia crystallizes in the same hexagonal structure as α-alumina, with a lattice mismatch of 4.1% in the a- and … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

6
44
0

Year Published

2006
2006
2021
2021

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 102 publications
(50 citation statements)
references
References 21 publications
6
44
0
Order By: Relevance
“…Similar suggestions have been made based on experimental investigations of thin film growth, where a larger momentum transfer to the growth surface has been found to promote crystalline alumina growth, 26 and based on the theoretical results for ions by Rosén et al 32 However, as was mentioned in the Introduction, other experimental studies point out the importance of the nucleation stage of growth and suggest that the stabilization of other phases at this stage might be a strong reason for the observed difficulties in synthesizing the ␣ phase. 30,49 Further investigations of, e.g., the diffusion barriers between the metastable Al sites and the bulk position, are needed in order to gain a more complete understanding of these issues.…”
Section: O-terminated Surfacementioning
confidence: 99%
See 3 more Smart Citations
“…Similar suggestions have been made based on experimental investigations of thin film growth, where a larger momentum transfer to the growth surface has been found to promote crystalline alumina growth, 26 and based on the theoretical results for ions by Rosén et al 32 However, as was mentioned in the Introduction, other experimental studies point out the importance of the nucleation stage of growth and suggest that the stabilization of other phases at this stage might be a strong reason for the observed difficulties in synthesizing the ␣ phase. 30,49 Further investigations of, e.g., the diffusion barriers between the metastable Al sites and the bulk position, are needed in order to gain a more complete understanding of these issues.…”
Section: O-terminated Surfacementioning
confidence: 99%
“…considerable amount of growth studies has been made, as exemplified in Refs. [25][26][27][28][29][30]. Often, the ␣ phase is the desired polymorph in growth situations.…”
Section: Introductionmentioning
confidence: 99%
See 2 more Smart Citations
“…One is to use ionized PVD (I-PVD) techniques [1], an approach that has yielded low-temperature-deposited θ-, κ-, and γ-alumina films [2,3,4,5,6,7] with higher crystallinity than for conventional PVD, and has permitted growth of α-Al 2 O 3 at temperatures below 700 °C [8,9,10]. The second approach is to promote the nucleation of α-Al 2 O 3 either by a crystallographic template such as α-Cr 2 O 3 [11,12,13] or in solid solution α-(Cr,Al) 2 O 3 [14,15,16,17]. We have previously investigated [5,6] amorphous and γ-alumina thin films deposited by the I-PVD technique inductively coupled plasma magnetron sputtering (ICP-MS), which uses an rf coil to increase the degree of ionization in the deposition flux [18].…”
Section: Introductionmentioning
confidence: 99%