Microstructures of undercooled Germanium droplets

Devaud, Genevieve; Turnbull, David

doi:10.1016/0001-6160(87)90202-1

Cited by 105 publications

(36 citation statements)

References 5 publications

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“…mentation. 19 On the other hand, Devaud and Turnbull, 20 and Lau and Kui reported that in Ge the grain refinement occurred at DT > 300 K and DT $ 230 K. This is because for Ge the value ofṼ at DT > 0:15 differs from that of Si.…”

Section: Discussionmentioning

confidence: 99%

Rapid Crystallization of Levitated and Undercooled Semiconducting Material Melts

Ishibashi

Kuribayashi

Nagayama

2012

JOM

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Using a CO 2 laser-equipped electromagnetic levitator, we carried out the containerless crystallization of Si and Ge. From the point of interface morphologies, the relation between growth velocities and undercoolings was classified into three regions. In regions I and II, although the morphologies of growing crystals are different: plate-like needle crystals in region I and facetted dendrite at region II, the growth velocities in these two regions are fundamentally scaled by the thermal diffusivities and the temperature increase caused by the release of the latent heat. This result means that the growth velocity can be expressed by the product of the thermal diffusivity and the growth kinetics. An analysis of the dendrite morphologies revealed that the kinetics of crystal growth in regions I and II represent two-dimensional nucleation at the reentrant corner formed at the edge of the two parallel twins. In region III, thermal diffusion-controlled interface attachment kinetics control as described by a modified Wilson-Frenkel model.

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Section: Discussionmentioning

confidence: 99%

Rapid Crystallization of Levitated and Undercooled Semiconducting Material Melts

Ishibashi

Kuribayashi

Nagayama

2012

JOM

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Section: Introductionmentioning

confidence: 99%

“…2,3) Because of the rapid progress of silicon wafer production technology the interest in faceted dendrite growth was subsided for many years until Devaud and Turnbull 4) found a twin-free dendrite in the late 1980s. Thereafter, intensive investigations on faceted free dendrite growth of germanium, silicon, and their alloys were carried out using the glass flux technique [4][5][6][7][8] or electromagnetic levitation technique [9][10][11][12][13][14][15][16] and the crystallographic morphology of solidified crystals was examined. The growth velocity of faceted dendrites was also measured for germanium, silicon, and their alloys [8][9][10][11][12][13][14][15][16] and the measured growth velocity was analyzed using an analytical dendrite model termed such as the BCT model 17) or the LKT model.…”

Section: Introductionmentioning

confidence: 99%

Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20 mass%Ni Alloy

2007

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Two-dimensional faceted crystal growth of silicon from undercooled melt of Si-20 mass%Ni alloy was experimentally investigated, in which a droplet sample from 10 to 100 mg was undercooled on a single-crystal sapphire and growing crystals were observed in situ. Observed crystals were classified according to the shapes of square, wedge and irregular shapes. The growth velocity was measured for different undercooling conditions. The growth velocity of square shaped crystals was about half times smaller than that of wedge shaped crystals. The growth of square shaped crystals is regarded to be two-dimensional and it is compared with the results of two-dimensional phase-field simulations. Growth velocity in both is in good agreement and the linear kinetic coefficient is estimated to be 0.002 m/sK.

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“…These works revealed that his dendrite had twins along its primary arm and grew in the /2 1 1S direction with (1 1 1) habit faces. Because of the rapid progress of silicon wafer production technology the interest in faceted dendrite growth was subsided for many years until Devaud and Turnbull [4] found a twin-free dendrite in the late 1980s. Thereafter, intensive investigations on faceted dendrite growth of germanium, silicon, and their alloys have been revived for clarifying the transition of growth kinetics.…”

Section: Introductionmentioning

confidence: 99%

“…Thereafter, intensive investigations on faceted dendrite growth of germanium, silicon, and their alloys have been revived for clarifying the transition of growth kinetics. In most experiments germanium or silicon was undercooled using the glass flux technique [4][5][6][7][8] or electromagnetic levitation technique [9][10][11][12][13][14][15][16] and the crystallographic morphology of solidified crystals was examined. The growth velocity of faceted dendrites was also measured for germanium, silicon, and their alloys [8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Faceted dendrite growth of silicon from undercooled melt of Si–Ni alloy

Kuniyoshi

Ozono

Ikeda

et al. 2006

Science and Technology of Advanced Materials

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Two-dimensional faceted dendrite growth of silicon from undercooled melt of Si-6 wt%Ni alloy was experimentally investigated, in which molten alloy film from 10 to 20 mm in thickness was undercooled up to 115 K and growing dendrites were observed in situ. Both the in situ observation of dendrite morphology and the EBSP crystallographic analysis for solidified samples showed that both a /2 1 1S twin dendrite and a /1 0 0S twin-free dendrite grew in the range of undercooling from 50 to 115 K. Dendrite growth velocity was also measured for different undercooling conditions. The growth velocity of /2 1 1S dendrites was slightly larger than that of /1 0 0S dendrites. It is concluded that the upper envelope of the data provide the correct dendrite growth velocity and it is compared with that obtained by phase-field simulations. Growth velocity in both follows power relationships to undercooling and the linear kinetic coefficient is estimated to be 0.01 m/s K. r

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Microstructures of undercooled Germanium droplets

Cited by 105 publications

References 5 publications

Rapid Crystallization of Levitated and Undercooled Semiconducting Material Melts

Rapid Crystallization of Levitated and Undercooled Semiconducting Material Melts

Faceted Crystal Growth of Silicon from Undercooled Melt of Si-20 mass%Ni Alloy

Faceted dendrite growth of silicon from undercooled melt of Si–Ni alloy

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