Microwave absorbing materials using Ag–NiZn ferrite core–shell nanopowders as fillers

Preparation and microwave absorption properties of Ni–B alloy-coated Fe3O4 particles

“…It can also be observed that the real part and imaginary part of permeability of Ni-B/Fe 3 O 4 are in general higher than that of Fe 3 O 4 in the low frequency range and almost the same in the high frequency range, which can be interpreted as follows: The Fe 3 O 4 particles are encapsulated in a Ni-B shell to form the core-shell structure. The demagnetizing field generated by the magnetic poles on the surface of the magnetic fillers plays a very important and characteristic role on the permeability of materials [15]. The enhanced μ and μ will improve the electromagnetic interference absorbing effect by transferring the electromagnetic energy into heat energy.…”

Enhancing microwave absorption of TiO2 nanocrystals via hydrogenation

“…[22][23][24][25][26][27][28] Increasing the absorption capability of shielding materials in the microwave region (2À18 GHz) is key to minimize radar reflection from aircraft surfaces to avoid radar detection, and to reduce data and information leakage in various electronic devices. [22][23][24][25][26][27][28] The absorption of the microwave electromagnetic field can be attributed to the losses of the electrical and magnetic fields of the microwave radiation within the materials. 24,25 The electrical loss is primarily caused by dielectric relaxation effects associated with the alignment of polar groups (permanent and induced dipoles) in the materials due to the rapidly propagating microwave electromagnetic field.…”

Microwave Absorber Based on Silver Nanoparticle-Embedded Polymer Thin Film

“…2-4 Composites of carbon nanotubes 5 and conducting polymers, 6 as well as core-shell nanostructures * Authors to whom correspondence should be addressed. such as silver@ferrite 7 and nickel@silver 8 have been demonstrated to show promising microwave absorption capability. Small amounts of semiconductor nanoparticles selectively doped in insulators below the percolation threshold, enhance the dielectric constant of the doped region; this property has been exploited in some MOSFET type device structures.…”