Dye-sensitized solar cells (DSSCs) show promise as a cheaper alternative to silicon-based photovoltaics for specialized applications, provided conversion efficiency can be maximized and production costs minimized. This study demonstrates that arrays of nanowires can be formed by wet-chemical methods for use as three-dimensional (3D) electrodes in DSSCs, thereby improving photoelectric conversion efficiency. Two approaches were employed to create the arrays of ITO (indium-tin-oxide) nanowires or arrays of ITO/TiO(2) core-shell nanowires; both methods were based on electrophoretic deposition (EPD) within a polycarbonate template. The 3D electrodes for solar cells were constructed by using a doctor-blade for coating TiO(2) layers onto the ITO or ITO/TiO(2) nanowire arrays. A photoelectric conversion efficiency as high as 4.3% was achieved in the DSSCs made from ITO nanowires; this performance was better than that of ITO/TiO(2) core-shell nanowires or pristine TiO(2) films. Cyclic voltammetry confirmed that the reaction current was significantly enhanced when a 3D ITO-nanowire electrode was used. Better separation of charge carriers and improved charge transport, due to the enlarged interfacial area, are thought to be the major advantages of using 3D nanowire electrodes for the optimization of DSSCs.

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(Ba0.7Sr0.3)TiO3 (BST) thin films doped with La, Nb and Mg ions along with an Mg/La, Mg/Nb codopant were prepared on Pt/Ti/SiO2/Si substrates by the metal-organic deposition method. A decrease of grain size, dielectric constant, and leakage current with increasing doping levels was observed for all studied cases. The grain size, dielectric constant and leakage current increased with increasing annealing temperatures for specimens doped with a single dopant. However, the leakage current was reduced to a minimum for the codoped materials at the donor/acceptor compensated concentration and decreased with increasing annealing temperatures. The decreased leakage current of the codoped materials could be explained by the additional barrier height and width of the insulating layer caused by the defect dipoles around grain boundaries.

SUMMARYThree-dimensional computations have been performed to study the flow through a symmetric sudden expansion with an expansion ratio of 3 at low Reynolds numbers. The aspect ratio of the flow channel is allowed to vary within a wide range to examine its influence on the flow which bifurcates from a symmetric state to an asymmetric state. The results reveal that the critical Reynolds number of the symmetry-breaking bifurcation increases while the aspect ratio is reduced. The flow behaviour near the side walls is illustrated by using limiting streamlines. The origin of the singular points identifiable on the side wall can be traced back to the recirculating flows and the relevant reattachment/separation points in the core of the channel. It is seen that the determination of the exact critical Reynolds number is not trivial because it depends on how to define asymmetric flow. Computations have also been conducted to show that a slight asymmetry in the channel geometry causes a smooth transition from symmetric to non-symmetric states.